Yield improvement in fabrication of edge emitting transistor lasers by optimized BCB planarization

Rohan Bambery, Milton Feng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An analysis into the low yield of the Transistor Laser process is performed and it is determined that the BCB planarizing polymer's spin non-uniformity is the primary cause of the failures observed. The process is modified to mitigate this effect and steps are outlined to further refine process control monitors in new layouts. The revised process is used to fabricate transistor lasers exhibiting > 14Ghz f-3dboptical bandwidth at 15°C.

Original languageEnglish (US)
Title of host publication2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013
Pages379-382
Number of pages4
StatePublished - Nov 15 2013
Event28th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013 - New Orleans, LA, United States
Duration: May 13 2013May 16 2013

Publication series

Name2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013

Other

Other28th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013
CountryUnited States
CityNew Orleans, LA
Period5/13/135/16/13

Keywords

  • BCB
  • HBT
  • Transistor laser
  • Yield

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Yield improvement in fabrication of edge emitting transistor lasers by optimized BCB planarization'. Together they form a unique fingerprint.

Cite this