XeCl Laser Power Enhancement with an External Ultraviolet Laser

D. B. Geohegan, James Gary Eden, A. W. McCown

Research output: Contribution to journalArticle

Abstract

Enhancements in the output energy of an XeCl laser of more than 50 percent have been observed by Injecting 2–43 mJ of 308 nm laser radiation into the resonator 10–150 ns prior to the emergence of the final XeCl pulse. This effect is a strong function of the time delay (Δt) between the two lasers and is most pronounced when the injected (external) pulse precedes the XeCl laser pulse by 45 ns. For| Δt| ≤ 100 ns, the external radiation appears to be simply “seeding” the XeCl laser cavity which allows the second laser to reach threshold earlier and thereby improve its extraction efficiency. For 100 ≤ |Δt| ≤ 150 ns, the enhancement may to arise from the depletion of the number density of an impurity molecule which absorbs strongly at 308 nm.

Original languageEnglish (US)
Pages (from-to)501-504
Number of pages4
JournalIEEE Journal of Quantum Electronics
Volume22
Issue number4
DOIs
StatePublished - Jan 1 1986

Fingerprint

Ultraviolet lasers
ultraviolet lasers
Lasers
augmentation
Laser pulses
lasers
Laser resonators
pulses
Laser radiation
Resonators
Time delay
inoculation
laser cavities
Impurities
Radiation
depletion
Molecules
time lag
resonators
laser beams

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

XeCl Laser Power Enhancement with an External Ultraviolet Laser. / Geohegan, D. B.; Eden, James Gary; McCown, A. W.

In: IEEE Journal of Quantum Electronics, Vol. 22, No. 4, 01.01.1986, p. 501-504.

Research output: Contribution to journalArticle

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