XCEED: XTREME commercial EUV exposure diagnostic experiment

Erik L. Antonsen, Keith C. Thompson, Matthew R. Hendricks, Darren A. Alman, Brian E. Jurczyk, David N. Ruzic, Tran Duc Chinh, Ginger Edwards, Stefan Wurm, Obert Wood, Robert Bristol

Research output: Contribution to journalConference articlepeer-review


The XCEED chamber was designed to allow diagnostic access to the conditions experienced by collecting optics for a discharge produced plasma (DPP) source. The chamber provides access for EUV photodiodes, sample exposure tests, Faraday cup measurements, and characterization of the ion debris field by a spherical sector energy analyzer (ESA). The Extreme Ultraviolet (EUV) light source creates a xenon z-pinch for the generation of 13.5 nm light. Typical EUV emission is characterized though a control photodiode. The chamber also allows characterization of optic samples at varying exposure times for normal and grazing incidence reflection angles during tests lasting up to 40 million pulses. The principal investigation is characterization of the debris field and the erosive effects on optics present. Light emission from the z-pinch is followed by ejection of multiply-charged ions which can significantly damage nearby mirror surfaces. Characterization of the ejecta is performed with an ESA that diagnoses fast ion species by energy-to-charge ratio using ion time of flight (ITOF) analysis. The ITOF-ESA is used to characterize both the energy and angular distribution of the debris field. In the current paper, the ESA is applied only to the ion debris emitted from the source. The effects of total particle flux on mirror samples are investigated through exposure testing. Samples are exposed to the source plasma and surface metrology is performed to analyze erosion and deposition effects on mirrors within the source chamber.

Original languageEnglish (US)
Article number143
Pages (from-to)1192-1202
Number of pages11
JournalProgress in Biomedical Optics and Imaging - Proceedings of SPIE
Issue numberII
StatePublished - Sep 19 2005
EventEmerging Lithographic Technologies IX - San Jose, CA, United States
Duration: Mar 1 2005Mar 3 2005


  • DPP
  • Debris Characterization
  • Debris Mitigation
  • ESA
  • EUV
  • EUV Light Source
  • Extreme Ultraviolet
  • ITOF
  • Spherical Sector Energy Analyzer
  • XTS 13-35

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Atomic and Molecular Physics, and Optics
  • Radiology Nuclear Medicine and imaging


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