X-ray study of strain and composition of Si/Ge 0.85Si 0.15 (111) islands grown in Volmer-Weber mode

A. Malachias, R. Magalhães-Paniago, S. Kycia, David G. Cahill

Research output: Contribution to journalArticlepeer-review

Abstract

An x-ray analysis to show the coherent growth of silicon islands in Volmer-Weber mode with a Ge 0.85Si 0.15 was discussed. The state of strain and chemical composition of the islands were evaluated by grazing incidence anomalous x-ray diffraction. The evlolution of these coherent islands was characterized by scanning tunneling microscopy, atomic force microscopy and transmission electron microscopy. The presence of Ge was evidenced from the buffer incorporated into the Si island by x-ray scattering measurements.

Original languageEnglish (US)
Pages (from-to)3234-3238
Number of pages5
JournalJournal of Applied Physics
Volume96
Issue number6
DOIs
StatePublished - Sep 15 2004

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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