X-ray study of strain and composition of Si/Ge _0.85Si _0.15 (111) islands grown in Volmer-Weber mode

An x-ray analysis to show the coherent growth of silicon islands in Volmer-Weber mode with a Ge _0.85Si _0.15 was discussed. The state of strain and chemical composition of the islands were evaluated by grazing incidence anomalous x-ray diffraction. The evlolution of these coherent islands was characterized by scanning tunneling microscopy, atomic force microscopy and transmission electron microscopy. The presence of Ge was evidenced from the buffer incorporated into the Si island by x-ray scattering measurements.