An x-ray analysis to show the coherent growth of silicon islands in Volmer-Weber mode with a Ge 0.85Si 0.15 was discussed. The state of strain and chemical composition of the islands were evaluated by grazing incidence anomalous x-ray diffraction. The evlolution of these coherent islands was characterized by scanning tunneling microscopy, atomic force microscopy and transmission electron microscopy. The presence of Ge was evidenced from the buffer incorporated into the Si island by x-ray scattering measurements.
|Original language||English (US)|
|Number of pages||5|
|Journal||Journal of Applied Physics|
|State||Published - Sep 15 2004|
ASJC Scopus subject areas
- Physics and Astronomy(all)