X-ray photoemission core level determination of the GaSb/AlSb heterojunction valence-band discontinuity

G. J. Gualtieri; G. P. Schwartz; R. G. Nuzzo; W. A. Sunder

doi:10.1063/1.97464

X-ray photoemission core level determination of the GaSb/AlSb heterojunction valence-band discontinuity

G. J. Gualtieri, G. P. Schwartz, R. G. Nuzzo, W. A. Sunder

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Abstract

The valence-band discontinuity ΔE_v has been determined for the (100) GaSb/AlSb strained-layer heterojunction with a room-temperature lattice mismatch of 0.65%, using x-ray photoemission core level spectroscopy. For 30 Å epitaxial layers of AlSb grown on GaSb, the measured valence-band offset was ΔE_v=0.40±0.15 eV. The reverse growth sequence consisting of a thin GaSb layer grown on an AlSb buffer exhibited the same valence-band offset, indicating that for the (100) oriented heterojunction ΔE_v is not strongly affected by the growth sequence.

Original language	English (US)
Pages (from-to)	1037-1039
Number of pages	3
Journal	Applied Physics Letters
Volume	49
Issue number	16
DOIs	https://doi.org/10.1063/1.97464
State	Published - 1986
Externally published	Yes

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Physics and Astronomy (miscellaneous)

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title = "X-ray photoemission core level determination of the GaSb/AlSb heterojunction valence-band discontinuity",

abstract = "The valence-band discontinuity ΔEv has been determined for the (100) GaSb/AlSb strained-layer heterojunction with a room-temperature lattice mismatch of 0.65%, using x-ray photoemission core level spectroscopy. For 30 {\AA} epitaxial layers of AlSb grown on GaSb, the measured valence-band offset was ΔEv=0.40±0.15 eV. The reverse growth sequence consisting of a thin GaSb layer grown on an AlSb buffer exhibited the same valence-band offset, indicating that for the (100) oriented heterojunction ΔEv is not strongly affected by the growth sequence.",

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year = "1986",

doi = "10.1063/1.97464",

language = "English (US)",

volume = "49",

pages = "1037--1039",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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AU - Gualtieri, G. J.

AU - Schwartz, G. P.

AU - Nuzzo, R. G.

AU - Sunder, W. A.

PY - 1986

Y1 - 1986

N2 - The valence-band discontinuity ΔEv has been determined for the (100) GaSb/AlSb strained-layer heterojunction with a room-temperature lattice mismatch of 0.65%, using x-ray photoemission core level spectroscopy. For 30 Å epitaxial layers of AlSb grown on GaSb, the measured valence-band offset was ΔEv=0.40±0.15 eV. The reverse growth sequence consisting of a thin GaSb layer grown on an AlSb buffer exhibited the same valence-band offset, indicating that for the (100) oriented heterojunction ΔEv is not strongly affected by the growth sequence.

AB - The valence-band discontinuity ΔEv has been determined for the (100) GaSb/AlSb strained-layer heterojunction with a room-temperature lattice mismatch of 0.65%, using x-ray photoemission core level spectroscopy. For 30 Å epitaxial layers of AlSb grown on GaSb, the measured valence-band offset was ΔEv=0.40±0.15 eV. The reverse growth sequence consisting of a thin GaSb layer grown on an AlSb buffer exhibited the same valence-band offset, indicating that for the (100) oriented heterojunction ΔEv is not strongly affected by the growth sequence.

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X-ray photoemission core level determination of the GaSb/AlSb heterojunction valence-band discontinuity

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