X-ray photoemission core level determination of the GaSb/AlSb heterojunction valence-band discontinuity

G. J. Gualtieri, G. P. Schwartz, R. G. Nuzzo, W. A. Sunder

Research output: Contribution to journalArticlepeer-review

Abstract

The valence-band discontinuity ΔEv has been determined for the (100) GaSb/AlSb strained-layer heterojunction with a room-temperature lattice mismatch of 0.65%, using x-ray photoemission core level spectroscopy. For 30 Å epitaxial layers of AlSb grown on GaSb, the measured valence-band offset was ΔEv=0.40±0.15 eV. The reverse growth sequence consisting of a thin GaSb layer grown on an AlSb buffer exhibited the same valence-band offset, indicating that for the (100) oriented heterojunction ΔEv is not strongly affected by the growth sequence.

Original languageEnglish (US)
Pages (from-to)1037-1039
Number of pages3
JournalApplied Physics Letters
Volume49
Issue number16
DOIs
StatePublished - Dec 1 1986
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'X-ray photoemission core level determination of the GaSb/AlSb heterojunction valence-band discontinuity'. Together they form a unique fingerprint.

Cite this