X-ray photoemission core level determination of the GaSb/AlSb heterojunction valence-band discontinuity

G. J. Gualtieri, G. P. Schwartz, Ralph G Nuzzo, W. A. Sunder

Research output: Contribution to journalArticle

Abstract

The valence-band discontinuity ΔEv has been determined for the (100) GaSb/AlSb strained-layer heterojunction with a room-temperature lattice mismatch of 0.65%, using x-ray photoemission core level spectroscopy. For 30 Å epitaxial layers of AlSb grown on GaSb, the measured valence-band offset was ΔEv=0.40±0.15 eV. The reverse growth sequence consisting of a thin GaSb layer grown on an AlSb buffer exhibited the same valence-band offset, indicating that for the (100) oriented heterojunction ΔEv is not strongly affected by the growth sequence.

Original languageEnglish (US)
Pages (from-to)1037-1039
Number of pages3
JournalApplied Physics Letters
Volume49
Issue number16
DOIs
StatePublished - Dec 1 1986
Externally publishedYes

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heterojunctions
discontinuity
photoelectric emission
valence
x rays
buffers
room temperature
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

X-ray photoemission core level determination of the GaSb/AlSb heterojunction valence-band discontinuity. / Gualtieri, G. J.; Schwartz, G. P.; Nuzzo, Ralph G; Sunder, W. A.

In: Applied Physics Letters, Vol. 49, No. 16, 01.12.1986, p. 1037-1039.

Research output: Contribution to journalArticle

Gualtieri, G. J. ; Schwartz, G. P. ; Nuzzo, Ralph G ; Sunder, W. A. / X-ray photoemission core level determination of the GaSb/AlSb heterojunction valence-band discontinuity. In: Applied Physics Letters. 1986 ; Vol. 49, No. 16. pp. 1037-1039.
@article{dc2695bb5e9749218e15dcbd091bde99,
title = "X-ray photoemission core level determination of the GaSb/AlSb heterojunction valence-band discontinuity",
abstract = "The valence-band discontinuity ΔEv has been determined for the (100) GaSb/AlSb strained-layer heterojunction with a room-temperature lattice mismatch of 0.65{\%}, using x-ray photoemission core level spectroscopy. For 30 {\AA} epitaxial layers of AlSb grown on GaSb, the measured valence-band offset was ΔEv=0.40±0.15 eV. The reverse growth sequence consisting of a thin GaSb layer grown on an AlSb buffer exhibited the same valence-band offset, indicating that for the (100) oriented heterojunction ΔEv is not strongly affected by the growth sequence.",
author = "Gualtieri, {G. J.} and Schwartz, {G. P.} and Nuzzo, {Ralph G} and Sunder, {W. A.}",
year = "1986",
month = "12",
day = "1",
doi = "10.1063/1.97464",
language = "English (US)",
volume = "49",
pages = "1037--1039",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "16",

}

TY - JOUR

T1 - X-ray photoemission core level determination of the GaSb/AlSb heterojunction valence-band discontinuity

AU - Gualtieri, G. J.

AU - Schwartz, G. P.

AU - Nuzzo, Ralph G

AU - Sunder, W. A.

PY - 1986/12/1

Y1 - 1986/12/1

N2 - The valence-band discontinuity ΔEv has been determined for the (100) GaSb/AlSb strained-layer heterojunction with a room-temperature lattice mismatch of 0.65%, using x-ray photoemission core level spectroscopy. For 30 Å epitaxial layers of AlSb grown on GaSb, the measured valence-band offset was ΔEv=0.40±0.15 eV. The reverse growth sequence consisting of a thin GaSb layer grown on an AlSb buffer exhibited the same valence-band offset, indicating that for the (100) oriented heterojunction ΔEv is not strongly affected by the growth sequence.

AB - The valence-band discontinuity ΔEv has been determined for the (100) GaSb/AlSb strained-layer heterojunction with a room-temperature lattice mismatch of 0.65%, using x-ray photoemission core level spectroscopy. For 30 Å epitaxial layers of AlSb grown on GaSb, the measured valence-band offset was ΔEv=0.40±0.15 eV. The reverse growth sequence consisting of a thin GaSb layer grown on an AlSb buffer exhibited the same valence-band offset, indicating that for the (100) oriented heterojunction ΔEv is not strongly affected by the growth sequence.

UR - http://www.scopus.com/inward/record.url?scp=0005441609&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0005441609&partnerID=8YFLogxK

U2 - 10.1063/1.97464

DO - 10.1063/1.97464

M3 - Article

VL - 49

SP - 1037

EP - 1039

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

ER -