Wideband AlGaN/GaN HEMTs on SiC for low noise applications

Wu Lu, J. W. Yang, M. Asif Khan, Ilesanmi Adesida

Research output: Contribution to conferencePaperpeer-review


The DC, RF, and high frequency noise characteristics of AlGaN/GaN high electron mobility transistor (HEMTs) demonstrating a record bandwidth of 100 GHz and NFmin of 0.53 dB at 8 GHz were studied. Excellent DC, RF, and high frequency noise performances was observed. Hence, the potential of AlGaN/GaN HEMTs for high frequency and low noise applications was confirmed.

Original languageEnglish (US)
Number of pages2
StatePublished - 2000
Event58th Device Research Conference (58th DRC) - Denver, CO, USA
Duration: Jun 19 2000Jun 21 2000


Other58th Device Research Conference (58th DRC)
CityDenver, CO, USA

ASJC Scopus subject areas

  • General Engineering


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