Wideband AlGaN/GaN HEMTs on SiC for low noise applications

Wu Lu; J. W. Yang; M. Asif Khan; Ilesanmi Adesida

Wideband AlGaN/GaN HEMTs on SiC for low noise applications

Wu Lu, J. W. Yang, M. Asif Khan, Ilesanmi Adesida

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Research output: Contribution to conference › Paper › peer-review

Abstract

The DC, RF, and high frequency noise characteristics of AlGaN/GaN high electron mobility transistor (HEMTs) demonstrating a record bandwidth of 100 GHz and NF_min of 0.53 dB at 8 GHz were studied. Excellent DC, RF, and high frequency noise performances was observed. Hence, the potential of AlGaN/GaN HEMTs for high frequency and low noise applications was confirmed.

Original language	English (US)
Pages	39-40
Number of pages	2
State	Published - 2000
Event	58th Device Research Conference (58th DRC) - Denver, CO, USA Duration: Jun 19 2000 → Jun 21 2000

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Other	58th Device Research Conference (58th DRC)
City	Denver, CO, USA
Period	6/19/00 → 6/21/00

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Engineering(all)

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title = "Wideband AlGaN/GaN HEMTs on SiC for low noise applications",

abstract = "The DC, RF, and high frequency noise characteristics of AlGaN/GaN high electron mobility transistor (HEMTs) demonstrating a record bandwidth of 100 GHz and NFmin of 0.53 dB at 8 GHz were studied. Excellent DC, RF, and high frequency noise performances was observed. Hence, the potential of AlGaN/GaN HEMTs for high frequency and low noise applications was confirmed.",

author = "Wu Lu and Yang, {J. W.} and Khan, {M. Asif} and Ilesanmi Adesida",

year = "2000",

language = "English (US)",

pages = "39--40",

note = "58th Device Research Conference (58th DRC) ; Conference date: 19-06-2000 Through 21-06-2000",

}

TY - CONF

T1 - Wideband AlGaN/GaN HEMTs on SiC for low noise applications

AU - Lu, Wu

AU - Yang, J. W.

AU - Khan, M. Asif

AU - Adesida, Ilesanmi

PY - 2000

Y1 - 2000

N2 - The DC, RF, and high frequency noise characteristics of AlGaN/GaN high electron mobility transistor (HEMTs) demonstrating a record bandwidth of 100 GHz and NFmin of 0.53 dB at 8 GHz were studied. Excellent DC, RF, and high frequency noise performances was observed. Hence, the potential of AlGaN/GaN HEMTs for high frequency and low noise applications was confirmed.

AB - The DC, RF, and high frequency noise characteristics of AlGaN/GaN high electron mobility transistor (HEMTs) demonstrating a record bandwidth of 100 GHz and NFmin of 0.53 dB at 8 GHz were studied. Excellent DC, RF, and high frequency noise performances was observed. Hence, the potential of AlGaN/GaN HEMTs for high frequency and low noise applications was confirmed.

UR - http://www.scopus.com/inward/record.url?scp=0033652313&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033652313&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0033652313

SP - 39

EP - 40

T2 - 58th Device Research Conference (58th DRC)

Y2 - 19 June 2000 through 21 June 2000

ER -

Wideband AlGaN/GaN HEMTs on SiC for low noise applications

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