Abstract
The differences between buried oxides converted from AlGaAs alloys versus AlAs using selective wet oxidation were reported. The buried oxides formed from the wet oxidation of AlGaAs alloys, rather than AlAs, were found to be superior in terms of oxidation isotropy, mechanical stability, and strain. The vertical cavity surface emitting lasers (VCSELs) using AlGaAs oxide layers as current apertures had shown promising reliability as compared to VCSELs using AlAs layers. Comparisons of lifetime data for VCSELs with differing oxide layers are presented. The beneficial properties of oxides converted from AlGaAs alloys were found to provide robust device processing of reliable VCSELs and may play an important role in other advanced optoelectronic devices.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 390-391 |
| Number of pages | 2 |
| Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Volume | 1 |
| State | Published - 1996 |
| Externally published | Yes |
| Event | Proceedings of the 1996 9th Annual Meeting of IEEE Lasers and Electro-Optics Society, LEOS'96. Part 1 (of 2) - Boston, MA, USA Duration: Nov 18 1996 → Nov 19 1996 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering