Wet oxidation of AlGaAs vs. AlAs: A little gallium is good

Kent D. Choquette, K. M. Geib, Robert Hull, H. Q. Hou, K. L. Lear, H. C. Chui, B. E. Hammons, J. A. Nevers

Research output: Contribution to journalConference articlepeer-review

Abstract

The differences between buried oxides converted from AlGaAs alloys versus AlAs using selective wet oxidation were reported. The buried oxides formed from the wet oxidation of AlGaAs alloys, rather than AlAs, were found to be superior in terms of oxidation isotropy, mechanical stability, and strain. The vertical cavity surface emitting lasers (VCSELs) using AlGaAs oxide layers as current apertures had shown promising reliability as compared to VCSELs using AlAs layers. Comparisons of lifetime data for VCSELs with differing oxide layers are presented. The beneficial properties of oxides converted from AlGaAs alloys were found to provide robust device processing of reliable VCSELs and may play an important role in other advanced optoelectronic devices.

Original languageEnglish (US)
Pages (from-to)390-391
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume1
StatePublished - Dec 1 1996
Externally publishedYes
EventProceedings of the 1996 9th Annual Meeting of IEEE Lasers and Electro-Optics Society, LEOS'96. Part 1 (of 2) - Boston, MA, USA
Duration: Nov 18 1996Nov 19 1996

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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