@inproceedings{8485ff98b2c54c239461d3e97cff0fc1,
title = "Wet-etching process problem identification in type-II InP DHBT for 5G power application",
abstract = "Wet-etching issues in type-II DHBT process fabricated by standard triple-mesa wet-etching have been identified and reported in this paper. For comparison, devices fabricated by hybrid-etching with incorporation of inductively-coupled-plasma (ICP) are also present. With better uniformity and yield, hybrid-etching process can potentially lead to a more reliable and reproducible process for 5G power amplifier application.",
keywords = "5G, InP DHBT, Power application, Process development",
author = "Peng, {Yu Ting} and Xin Yu and Milton Feng",
note = "Publisher Copyright: {\textcopyright} CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers.; 2020 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2020 ; Conference date: 11-05-2020 Through 14-05-2020",
year = "2020",
language = "English (US)",
series = "CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers",
publisher = "CS Mantech",
pages = "111--114",
booktitle = "CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers",
}