Wear-out simulation environment for VLSI designs

Keyphrases

• Simulation Environment 100%
• Wearout 100%
• VLSI Design 100%
• Circuit Simulation 50%
• Technology Effect 50%
• Device Level 50%
• Monte Carlo Simulation 50%
• Custom Design 50%
• Device Dimensions 50%
• Electromigration 50%
• Dimensionality Reduction 50%
• Importance Sampling 50%
• Reliability Prediction 50%
• Event Sequences 50%
• Fabrication Technology 50%
• Failure Mode 50%
• Monte Carlo Analysis 50%
• Operating Voltage 50%
• Technology Parameters 50%
• Reliability Assessment 50%
• VLSI Systems 50%
• Switch Level 50%
• Dynamic Sequence 50%
• Oxide Breakdown 50%
• Operating Environment 50%
• Time-to-failure Distribution 50%
• Weak Location 50%
• VLSI chip 50%
• Simulation-based Approach 50%
• Microprocessor chips 50%
• Improved Technology 50%
• Environmental Technology 50%

Engineering

• Failure Mode 100%
• Circuit Simulation 100%
• Microprocessor Chips 100%
• Operating Voltage 100%
• Electromigration 100%
• Monte Carlo Analysis 100%
• Simulation Environment 100%
• Run Length 100%
• Reliability Assessment 100%
• Reliability Prediction 100%
• Operating Environment 100%
• Level Switch 100%