Weak localization and microwave-irradiated transport in multilayer epitaxial graphene grown on SiC

  • Chieh I. Liu
  • , Pengjie Wang
  • , Jian Mi
  • , Hsin Yen Lee
  • , Yi Ting Wang
  • , I. Fan Ho
  • , Chi Zhang
  • , Xi Lin
  • , Randolph E. Elmquist
  • , Chi Te Liang

Research output: Contribution to journalArticlepeer-review

Abstract

Wehave studied weak localization (WL) and microwave-irradiated transport in multilayer graphene grown on SiC(0001). Different scattering channels are identified by analyzing theWLdata. Moreover, we have shown that at a fixed ambient temperature, irradiating graphene with a microwave appears to be equivalent to changing the ambient temperature without microwave.Wefind that both the zero-field resistance of graphene and theWLcorrection term can be used as reliable thermometers which agree well with each other.

Original languageEnglish (US)
Article number115002
JournalMaterials Research Express
Volume2
Issue number11
DOIs
StatePublished - Nov 2015
Externally publishedYes

Keywords

  • Graphene
  • Microwave
  • Weak localization

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Surfaces, Coatings and Films
  • Polymers and Plastics
  • Metals and Alloys

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