Abstract
A two-dimensional vertical-cavity surface-emitting laser array, with each element emitting at different wavelengths, was fabricated by selective area growth (SAG) metallorganic vapor phase epitaxy (MOVPE). Two-dimensional steady-state finite-difference calculation was used to model the flux of materials on the masked and exposed areas of an annular-ring array pattern. The thickness and composition enhancements of perfectly-selectively grown InGaAs/GaAs/AlGaAs heterostructures measured from thickness profiler and cathodoluminescence measurements are in excellent agreement with the modeled results.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 23-24 |
| Number of pages | 2 |
| Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Volume | 2 |
| State | Published - 1998 |
| Externally published | Yes |
| Event | Proceedings of the 1998 11th Annual Meeting IEEE Lasers and Electro-Optics Society, LEOS. Part 2 (of 2) - Orlando, FL, USA Duration: Dec 1 1998 → Dec 4 1998 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering