Wavelength-division multiplexing vertical-cavity surface emitting laser arrays fabricated by selective area MOCVD growth

H. Q. Hou, K. D. Choquette, M. E. Coltrin, B. E. Hammons, K. M. Geib

Research output: Contribution to journalConference articlepeer-review

Abstract

A two-dimensional vertical-cavity surface-emitting laser array, with each element emitting at different wavelengths, was fabricated by selective area growth (SAG) metallorganic vapor phase epitaxy (MOVPE). Two-dimensional steady-state finite-difference calculation was used to model the flux of materials on the masked and exposed areas of an annular-ring array pattern. The thickness and composition enhancements of perfectly-selectively grown InGaAs/GaAs/AlGaAs heterostructures measured from thickness profiler and cathodoluminescence measurements are in excellent agreement with the modeled results.

Original languageEnglish (US)
Pages (from-to)23-24
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2
StatePublished - Dec 1 1998
Externally publishedYes
EventProceedings of the 1998 11th Annual Meeting IEEE Lasers and Electro-Optics Society, LEOS. Part 2 (of 2) - Orlando, FL, USA
Duration: Dec 1 1998Dec 4 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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