Wavelength dependent characteristics of high-speed metamorphic photodiodes

J. H. Jang, G. Cueva, R. Sankaralingam, P. Fay, W. E. Hoke, I. Adesida

Research output: Contribution to journalArticlepeer-review

Abstract

Double-heterojunction photodiodes based on GaAs metamorphic growth technology are described. The effect of the large bandgap InAlAs layer incorporated in the device heterostructure was examined by measuring wavelength dependent responsivities and bandwidths at 0.85-, 1.33-, and 1.55-μm illumination. The photodiodes exhibited 0.4 A/W responsivity and over 50-GHz bandwidth for 1.55-μm laser illumination. The bias voltage required to achieve the maximum bandwidth was measured to be less than -1 V.

Original languageEnglish (US)
Pages (from-to)281-283
Number of pages3
JournalIEEE Photonics Technology Letters
Volume15
Issue number2
DOIs
StatePublished - Feb 2003

Keywords

  • GaAs
  • Metamorphic
  • Photodiodes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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