Wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser

W. W. Chow, R. P. Schneider, J. A. Lott, Kent D Choquette

Research output: Contribution to journalArticlepeer-review

Abstract

The wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser is investigated using a microscopic theory of the semiconductor gain medium. Good agreement is found between experiment and theory for the minimum threshold lasing wavelength for a range of laser structures.

Original languageEnglish (US)
Pages (from-to)135-137
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number2
DOIs
StatePublished - Dec 1 1994
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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