Wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser

W. W. Chow; R. P. Schneider; J. A. Lott; K. D. Choquette

doi:10.1063/1.112972

Wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser

W. W. Chow, R. P. Schneider, J. A. Lott, K. D. Choquette

Research output: Contribution to journal › Article › peer-review

Abstract

The wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser is investigated using a microscopic theory of the semiconductor gain medium. Good agreement is found between experiment and theory for the minimum threshold lasing wavelength for a range of laser structures.

Original language	English (US)
Pages (from-to)	135-137
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	2
DOIs	https://doi.org/10.1063/1.112972
State	Published - 1994
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.112972

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title = "Wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser",

abstract = "The wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser is investigated using a microscopic theory of the semiconductor gain medium. Good agreement is found between experiment and theory for the minimum threshold lasing wavelength for a range of laser structures.",

author = "Chow, {W. W.} and Schneider, {R. P.} and Lott, {J. A.} and Choquette, {K. D.}",

year = "1994",

doi = "10.1063/1.112972",

language = "English (US)",

volume = "65",

pages = "135--137",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Publising LLC",

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T1 - Wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser

AU - Chow, W. W.

AU - Schneider, R. P.

AU - Lott, J. A.

AU - Choquette, K. D.

PY - 1994

Y1 - 1994

N2 - The wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser is investigated using a microscopic theory of the semiconductor gain medium. Good agreement is found between experiment and theory for the minimum threshold lasing wavelength for a range of laser structures.

AB - The wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser is investigated using a microscopic theory of the semiconductor gain medium. Good agreement is found between experiment and theory for the minimum threshold lasing wavelength for a range of laser structures.

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U2 - 10.1063/1.112972

DO - 10.1063/1.112972

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VL - 65

SP - 135

EP - 137

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser

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