Waveguide-integrated Germanium avalanche photodetector for low-noise and high-speed operation

Solomon Assefa; Fengnian Xia; Yurii A Vlasov

doi:10.1109/GROUP4.2010.5643341

Waveguide-integrated Germanium avalanche photodetector for low-noise and high-speed operation

Solomon Assefa, Fengnian Xia, Yurii A Vlasov

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A waveguide-integrated Germanium avalanche photodetector with 10dB gain and excess-noise factor with k _eff below 0.2 was demonstrated. Gain-bandwidth-product of 350GHz was achieved at 3V. The single-crystalline Ge waveguide was integrated utilizing rapid melt growth technique.

Original language	English (US)
Title of host publication	2010 7th IEEE International Conference on Group IV Photonics, GFP 2010
Number of pages	1
DOIs	https://doi.org/10.1109/GROUP4.2010.5643341
State	Published - Dec 1 2010
Externally published	Yes
Event	2010 7th IEEE International Conference on Group IV Photonics, GFP 2010 - Beijing, China Duration: Sep 1 2010 → Sep 3 2010

Publication series

Name	IEEE International Conference on Group IV Photonics GFP
ISSN (Print)	1949-2081

Other

Other	2010 7th IEEE International Conference on Group IV Photonics, GFP 2010
Country	China
City	Beijing
Period	9/1/10 → 9/3/10

ASJC Scopus subject areas

Electrical and Electronic Engineering
Ceramics and Composites
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/GROUP4.2010.5643341

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Cite this

Waveguide-integrated Germanium avalanche photodetector for low-noise and high-speed operation. / Assefa, Solomon; Xia, Fengnian; Vlasov, Yurii A.

2010 7th IEEE International Conference on Group IV Photonics, GFP 2010. 2010. 5643341 (IEEE International Conference on Group IV Photonics GFP).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Assefa, S, Xia, F & Vlasov, YA 2010, Waveguide-integrated Germanium avalanche photodetector for low-noise and high-speed operation. in 2010 7th IEEE International Conference on Group IV Photonics, GFP 2010., 5643341, IEEE International Conference on Group IV Photonics GFP, 2010 7th IEEE International Conference on Group IV Photonics, GFP 2010, Beijing, China, 9/1/10. https://doi.org/10.1109/GROUP4.2010.5643341

@inproceedings{004565d367474f1489f81d3671964cee,

title = "Waveguide-integrated Germanium avalanche photodetector for low-noise and high-speed operation",

abstract = " A waveguide-integrated Germanium avalanche photodetector with 10dB gain and excess-noise factor with k eff below 0.2 was demonstrated. Gain-bandwidth-product of 350GHz was achieved at 3V. The single-crystalline Ge waveguide was integrated utilizing rapid melt growth technique.",

author = "Solomon Assefa and Fengnian Xia and Vlasov, {Yurii A}",

year = "2010",

month = dec,

day = "1",

doi = "10.1109/GROUP4.2010.5643341",

language = "English (US)",

isbn = "9781424463442",

series = "IEEE International Conference on Group IV Photonics GFP",

booktitle = "2010 7th IEEE International Conference on Group IV Photonics, GFP 2010",

note = "2010 7th IEEE International Conference on Group IV Photonics, GFP 2010 ; Conference date: 01-09-2010 Through 03-09-2010",

}

TY - GEN

T1 - Waveguide-integrated Germanium avalanche photodetector for low-noise and high-speed operation

AU - Assefa, Solomon

AU - Xia, Fengnian

AU - Vlasov, Yurii A

PY - 2010/12/1

Y1 - 2010/12/1

N2 - A waveguide-integrated Germanium avalanche photodetector with 10dB gain and excess-noise factor with k eff below 0.2 was demonstrated. Gain-bandwidth-product of 350GHz was achieved at 3V. The single-crystalline Ge waveguide was integrated utilizing rapid melt growth technique.

AB - A waveguide-integrated Germanium avalanche photodetector with 10dB gain and excess-noise factor with k eff below 0.2 was demonstrated. Gain-bandwidth-product of 350GHz was achieved at 3V. The single-crystalline Ge waveguide was integrated utilizing rapid melt growth technique.

UR - http://www.scopus.com/inward/record.url?scp=78651358334&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78651358334&partnerID=8YFLogxK

U2 - 10.1109/GROUP4.2010.5643341

DO - 10.1109/GROUP4.2010.5643341

M3 - Conference contribution

AN - SCOPUS:78651358334

SN - 9781424463442

T3 - IEEE International Conference on Group IV Photonics GFP

BT - 2010 7th IEEE International Conference on Group IV Photonics, GFP 2010

T2 - 2010 7th IEEE International Conference on Group IV Photonics, GFP 2010

Y2 - 1 September 2010 through 3 September 2010

ER -