Wafer-scale production of uniform InAsyP1-ynanowire array on silicon for heterogeneous integration

Jae Cheol Shin, Ari Lee, Parsian Katal Mohseni, Do Yang Kim, Lan Yu, Jae Hun Kim, Hyo Jin Kim, Won Jun Choi, Daniel Wasserman, Kyoung Jin Choi, Xiuling Li

Research output: Contribution to journalArticle

Abstract

One-dimensional crystal growth allows the epitaxial integration of compound semiconductors on silicon (Si), as the large lattice-mismatch strain arising from heterointerfaces can be laterally relieved. Here, we report the direct heteroepitaxial growth of a mixed anion ternary InAsyP1-y nanowire array across an entire 2 in. Si wafer with unprecedented spatial, structural, and special uniformity across the entire 2 in. wafer and dramatic improvements in aspect ratio (>100) and area density (>5 × 10 8/cm2). Heterojunction solar cells consisting of n-type InAsyP1-y (y = 0.75) and p-type Si achieve a conversion efficiency of 3.6% under air mass 1.5 illumination. This work demonstrates the potential for large-scale production of these nanowires for heterogeneous integration of optoelectronic devices.

Original languageEnglish (US)
Pages (from-to)5463-5471
Number of pages9
JournalACS Nano
Volume7
Issue number6
DOIs
StatePublished - Jun 25 2013

Fingerprint

Silicon
Nanowires
wafers
Lattice mismatch
silicon
nanowires
Crystallization
Silicon wafers
Epitaxial growth
Crystal growth
Optoelectronic devices
Conversion efficiency
Anions
Heterojunctions
Aspect ratio
Solar cells
Negative ions
Lighting
air masses
Semiconductor materials

Keywords

  • heterojunction
  • III-V semiconductor
  • InAsP
  • MOCVD
  • nanowire

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Shin, J. C., Lee, A., Katal Mohseni, P., Kim, D. Y., Yu, L., Kim, J. H., ... Li, X. (2013). Wafer-scale production of uniform InAsyP1-ynanowire array on silicon for heterogeneous integration. ACS Nano, 7(6), 5463-5471. https://doi.org/10.1021/nn4014774

Wafer-scale production of uniform InAsyP1-ynanowire array on silicon for heterogeneous integration. / Shin, Jae Cheol; Lee, Ari; Katal Mohseni, Parsian; Kim, Do Yang; Yu, Lan; Kim, Jae Hun; Kim, Hyo Jin; Choi, Won Jun; Wasserman, Daniel; Choi, Kyoung Jin; Li, Xiuling.

In: ACS Nano, Vol. 7, No. 6, 25.06.2013, p. 5463-5471.

Research output: Contribution to journalArticle

Shin, JC, Lee, A, Katal Mohseni, P, Kim, DY, Yu, L, Kim, JH, Kim, HJ, Choi, WJ, Wasserman, D, Choi, KJ & Li, X 2013, 'Wafer-scale production of uniform InAsyP1-ynanowire array on silicon for heterogeneous integration', ACS Nano, vol. 7, no. 6, pp. 5463-5471. https://doi.org/10.1021/nn4014774
Shin JC, Lee A, Katal Mohseni P, Kim DY, Yu L, Kim JH et al. Wafer-scale production of uniform InAsyP1-ynanowire array on silicon for heterogeneous integration. ACS Nano. 2013 Jun 25;7(6):5463-5471. https://doi.org/10.1021/nn4014774
Shin, Jae Cheol ; Lee, Ari ; Katal Mohseni, Parsian ; Kim, Do Yang ; Yu, Lan ; Kim, Jae Hun ; Kim, Hyo Jin ; Choi, Won Jun ; Wasserman, Daniel ; Choi, Kyoung Jin ; Li, Xiuling. / Wafer-scale production of uniform InAsyP1-ynanowire array on silicon for heterogeneous integration. In: ACS Nano. 2013 ; Vol. 7, No. 6. pp. 5463-5471.
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