Wafer-scale production of uniform InAsyP1-ynanowire array on silicon for heterogeneous integration

Jae Cheol Shin, Ari Lee, Parsian Katal Mohseni, Do Yang Kim, Lan Yu, Jae Hun Kim, Hyo Jin Kim, Won Jun Choi, Daniel Wasserman, Kyoung Jin Choi, Xiuling Li

Research output: Contribution to journalArticle

Abstract

One-dimensional crystal growth allows the epitaxial integration of compound semiconductors on silicon (Si), as the large lattice-mismatch strain arising from heterointerfaces can be laterally relieved. Here, we report the direct heteroepitaxial growth of a mixed anion ternary InAsyP1-y nanowire array across an entire 2 in. Si wafer with unprecedented spatial, structural, and special uniformity across the entire 2 in. wafer and dramatic improvements in aspect ratio (>100) and area density (>5 × 10 8/cm2). Heterojunction solar cells consisting of n-type InAsyP1-y (y = 0.75) and p-type Si achieve a conversion efficiency of 3.6% under air mass 1.5 illumination. This work demonstrates the potential for large-scale production of these nanowires for heterogeneous integration of optoelectronic devices.

Original languageEnglish (US)
Pages (from-to)5463-5471
Number of pages9
JournalACS Nano
Volume7
Issue number6
DOIs
StatePublished - Jun 25 2013

Keywords

  • heterojunction
  • III-V semiconductor
  • InAsP
  • MOCVD
  • nanowire

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)
  • Physics and Astronomy(all)

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  • Cite this

    Shin, J. C., Lee, A., Katal Mohseni, P., Kim, D. Y., Yu, L., Kim, J. H., Kim, H. J., Choi, W. J., Wasserman, D., Choi, K. J., & Li, X. (2013). Wafer-scale production of uniform InAsyP1-ynanowire array on silicon for heterogeneous integration. ACS Nano, 7(6), 5463-5471. https://doi.org/10.1021/nn4014774