TY - JOUR
T1 - Wafer-Scale Method of Controlling Impurity-Induced Disordering for Optical Mode Engineering in High-Performance VCSELs
AU - Su, Patrick
AU - Hsiao, Fu Chen
AU - O'Brien, Thomas
AU - Dallesasse, John M.
N1 - Funding Information:
Manuscript received July 2, 2018; revised August 14, 2018; accepted August 14, 2018. Date of publication August 17, 2018; date of current version October 29, 2018. This work was supported in part by E2CDA-NRI, a funded center of NRI, a Semiconductor Research Corporation program sponsored by NERC and NIST under Grant NERC 2016-NE-2697-A, and in part by the National Science Foundation under Grant ECCS 16-40196 and Grant NSF ACI 16-59, and in part by the II-VI Foundation. (Corresponding author: Patrick Su.) The authors are with the Department of Electrical and Computer Engineering, University of Illinois at Urbana–Champaign, Urbana, IL 61801 USA (e-mail: psu8@illinois.edu; fhsiao3@illinois.edu; tobrien3@illinois.edu; jdallesa@illinois.edu). Digital Object Identifier 10.1109/TSM.2018.2866065
Publisher Copyright:
© 1988-2012 IEEE.
PY - 2018/11
Y1 - 2018/11
N2 - Impurity-induced disordering (IID) provides a wafer-scale method of enhancing the performance of vertical-cavity surface-emitting lasers (VCSELs) for applications requiring higher output power in a specific optical mode. IID has been demonstrated to achieve higher optical power, faster modulation, and single-mode operation in oxide-confined VCSELs. Through the formation of an IID aperture, spatial control of mirror reflectivity can be selectively used to increase the threshold modal gain of only selected optical modes. However, these IID apertures have been limited by the lack of a method to control the shape of the diffusion front. For maximum laser mirror loss, IID apertures employed for mode-control require deep disordering. Consequently, significant lateral diffusion can be present that undesirably increases the lasing threshold for the fundamental mode. A manufacturable method is presented for controlling the shape of the IID aperture diffusion front by tailoring the strain of the diffusion mask. Experimental analysis to determine an optimal IID aperture size for single-mode high-power operation is next discussed. Numerical analysis of the mirror losses induced and consequent reduction in supported higher order modes as a result of the IID aperture is then presented.
AB - Impurity-induced disordering (IID) provides a wafer-scale method of enhancing the performance of vertical-cavity surface-emitting lasers (VCSELs) for applications requiring higher output power in a specific optical mode. IID has been demonstrated to achieve higher optical power, faster modulation, and single-mode operation in oxide-confined VCSELs. Through the formation of an IID aperture, spatial control of mirror reflectivity can be selectively used to increase the threshold modal gain of only selected optical modes. However, these IID apertures have been limited by the lack of a method to control the shape of the diffusion front. For maximum laser mirror loss, IID apertures employed for mode-control require deep disordering. Consequently, significant lateral diffusion can be present that undesirably increases the lasing threshold for the fundamental mode. A manufacturable method is presented for controlling the shape of the IID aperture diffusion front by tailoring the strain of the diffusion mask. Experimental analysis to determine an optimal IID aperture size for single-mode high-power operation is next discussed. Numerical analysis of the mirror losses induced and consequent reduction in supported higher order modes as a result of the IID aperture is then presented.
KW - Vertical-cavity surface-emitting laser
KW - compound semiconductors
KW - impurity-induced disordering
KW - single-fundamental-mode
KW - wafer-scale manufacturing
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U2 - 10.1109/TSM.2018.2866065
DO - 10.1109/TSM.2018.2866065
M3 - Article
AN - SCOPUS:85051762716
SN - 0894-6507
VL - 31
SP - 447
EP - 453
JO - IEEE Transactions on Semiconductor Manufacturing
JF - IEEE Transactions on Semiconductor Manufacturing
IS - 4
M1 - 8438929
ER -