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W-Band Oscillator Using Ion-Implanted InGaAs MESFET's
J. M. Schellenberg
, C. L. Lau
,
M. Feng
, P. Brusenback
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Engineering
Indium Gallium Arsenide
100%
Field Effect Transistor
100%
W-Band
100%
Output Power
66%
Ion Implantation
33%
Material Science
Field Effect Transistor
100%
Indium Gallium Arsenide
100%
Ion Implantation
33%
Microwave Technology
33%
Physics
Field Effect Transistor
100%
Ion Implantation
50%
Microwave Technology
50%
Keyphrases
W-band Frequencies
100%
IMPATT
50%