W-Band Oscillator Using Ion-Implanted InGaAs MESFET's

While FET devices dominate microwave applications at lower frequencies, they have not yet demonstrated sufficient power as a source at W-band frequencies to displace 2-terminal Gunn and IMPATT devices. A fundamental FET oscillator is reported operating at 92.3 GHz with an output power of 14 mW. This is the highest reported output power for an FET oscillator at W-band frequencies and is comparable to commercial Gunn diode oscillators. Further, these results were achieved with an InGaAs MESFET device that was fabricated using low-cost ion-implantation techniques.