W-Band Oscillator Using Ion-Implanted InGaAs MESFET's

J. M. Schellenberg, C. L. Lau, M. Feng, P. Brusenback

Research output: Contribution to journalArticlepeer-review

Abstract

While FET devices dominate microwave applications at lower frequencies, they have not yet demonstrated sufficient power as a source at W-band frequencies to displace 2-terminal Gunn and IMPATT devices. A fundamental FET oscillator is reported operating at 92.3 GHz with an output power of 14 mW. This is the highest reported output power for an FET oscillator at W-band frequencies and is comparable to commercial Gunn diode oscillators. Further, these results were achieved with an InGaAs MESFET device that was fabricated using low-cost ion-implantation techniques.

Original languageEnglish (US)
Pages (from-to)100-102
Number of pages3
JournalIEEE Microwave and Guided Wave Letters
Volume1
Issue number5
DOIs
StatePublished - May 1991
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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