W-Band Oscillator Using Ion-Implanted InGaAs MESFET's

J. M. Schellenberg; C. L. Lau; M. Feng; P. Brusenback

doi:10.1109/75.89076

W-Band Oscillator Using Ion-Implanted InGaAs MESFET's

J. M. Schellenberg, C. L. Lau, M. Feng, P. Brusenback

Research output: Contribution to journal › Article › peer-review

Abstract

While FET devices dominate microwave applications at lower frequencies, they have not yet demonstrated sufficient power as a source at W-band frequencies to displace 2-terminal Gunn and IMPATT devices. A fundamental FET oscillator is reported operating at 92.3 GHz with an output power of 14 mW. This is the highest reported output power for an FET oscillator at W-band frequencies and is comparable to commercial Gunn diode oscillators. Further, these results were achieved with an InGaAs MESFET device that was fabricated using low-cost ion-implantation techniques.

Original language	English (US)
Pages (from-to)	100-102
Number of pages	3
Journal	IEEE Microwave and Guided Wave Letters
Volume	1
Issue number	5
DOIs	https://doi.org/10.1109/75.89076
State	Published - May 1991
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "W-Band Oscillator Using Ion-Implanted InGaAs MESFET's",

abstract = "While FET devices dominate microwave applications at lower frequencies, they have not yet demonstrated sufficient power as a source at W-band frequencies to displace 2-terminal Gunn and IMPATT devices. A fundamental FET oscillator is reported operating at 92.3 GHz with an output power of 14 mW. This is the highest reported output power for an FET oscillator at W-band frequencies and is comparable to commercial Gunn diode oscillators. Further, these results were achieved with an InGaAs MESFET device that was fabricated using low-cost ion-implantation techniques.",

author = "Schellenberg, {J. M.} and Lau, {C. L.} and M. Feng and P. Brusenback",

year = "1991",

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AU - Lau, C. L.

AU - Feng, M.

AU - Brusenback, P.

PY - 1991/5

Y1 - 1991/5

N2 - While FET devices dominate microwave applications at lower frequencies, they have not yet demonstrated sufficient power as a source at W-band frequencies to displace 2-terminal Gunn and IMPATT devices. A fundamental FET oscillator is reported operating at 92.3 GHz with an output power of 14 mW. This is the highest reported output power for an FET oscillator at W-band frequencies and is comparable to commercial Gunn diode oscillators. Further, these results were achieved with an InGaAs MESFET device that was fabricated using low-cost ion-implantation techniques.

AB - While FET devices dominate microwave applications at lower frequencies, they have not yet demonstrated sufficient power as a source at W-band frequencies to displace 2-terminal Gunn and IMPATT devices. A fundamental FET oscillator is reported operating at 92.3 GHz with an output power of 14 mW. This is the highest reported output power for an FET oscillator at W-band frequencies and is comparable to commercial Gunn diode oscillators. Further, these results were achieved with an InGaAs MESFET device that was fabricated using low-cost ion-implantation techniques.

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ER -

W-Band Oscillator Using Ion-Implanted InGaAs MESFET's

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