Abstract
While FET devices dominate microwave applications at lower frequencies, they have not yet demonstrated sufficient power as a source at W-band frequencies to displace 2-terminal Gunn and IMPATT devices. A fundamental FET oscillator is reported operating at 92.3 GHz with an output power of 14 mW. This is the highest reported output power for an FET oscillator at W-band frequencies and is comparable to commercial Gunn diode oscillators. Further, these results were achieved with an InGaAs MESFET device that was fabricated using low-cost ion-implantation techniques.
Original language | English (US) |
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Pages (from-to) | 100-102 |
Number of pages | 3 |
Journal | IEEE Microwave and Guided Wave Letters |
Volume | 1 |
Issue number | 5 |
DOIs | |
State | Published - May 1991 |
Externally published | Yes |
ASJC Scopus subject areas
- General Engineering
- General Physics and Astronomy