W-band InGaP/GaAs HBT MMIC frequency sources

M. S. Heins, T. Juneja, J. A. Fendrich, J. Mu, D. Scott, Q. Yang, M. Hattendorf, G. E. Stillman, M. Feng

Research output: Contribution to journalConference articlepeer-review

Abstract

W-band frequency sources using InGaP/GaAs HBTs are compared. The first is a fundamental frequency oscillator that provides 93 μW output power at 73.5 GHz in a compact (0.404 mm2) chip, while the other is a doubled 38 GHz VCO providing 75 μW output power and improved phase noise in a 5 times larger (2.139 mm2) chip. The trade-offs in both of these designs are discussed. It was also found that cooling the 38 GHz VCOs to 100 Kelvin and 200 Kelvin improved the phase noise performance.

Original languageEnglish (US)
Pages (from-to)239-242
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume1
StatePublished - Dec 1 1999
EventProceedings of the 1999 IEEE MTT-S International Microwave Symposium Digest 'The Magic Touch of Microwaves' - Anaheim, CA, USA
Duration: Jun 13 1999Jun 19 1999

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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