W-band InGaP/GaAs HBT MMIC frequency sources

M. S. Heins; T. Juneja; J. A. Fendrich; J. Mu; D. Scott; Q. Yang; M. Hattendorf; G. E. Stillman; M. Feng

W-band InGaP/GaAs HBT MMIC frequency sources

M. S. Heins, T. Juneja, J. A. Fendrich, J. Mu, D. Scott, Q. Yang, M. Hattendorf, G. E. Stillman, M. Feng

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

W-band frequency sources using InGaP/GaAs HBTs are compared. The first is a fundamental frequency oscillator that provides 93 μW output power at 73.5 GHz in a compact (0.404 mm²) chip, while the other is a doubled 38 GHz VCO providing 75 μW output power and improved phase noise in a 5 times larger (2.139 mm²) chip. The trade-offs in both of these designs are discussed. It was also found that cooling the 38 GHz VCOs to 100 Kelvin and 200 Kelvin improved the phase noise performance.

Original language	English (US)
Pages (from-to)	239-242
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	1
State	Published - 1999
Event	Proceedings of the 1999 IEEE MTT-S International Microwave Symposium Digest 'The Magic Touch of Microwaves' - Anaheim, CA, USA Duration: Jun 13 1999 → Jun 19 1999

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "W-band InGaP/GaAs HBT MMIC frequency sources",

abstract = "W-band frequency sources using InGaP/GaAs HBTs are compared. The first is a fundamental frequency oscillator that provides 93 μW output power at 73.5 GHz in a compact (0.404 mm2) chip, while the other is a doubled 38 GHz VCO providing 75 μW output power and improved phase noise in a 5 times larger (2.139 mm2) chip. The trade-offs in both of these designs are discussed. It was also found that cooling the 38 GHz VCOs to 100 Kelvin and 200 Kelvin improved the phase noise performance.",

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year = "1999",

language = "English (US)",

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journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

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note = "Proceedings of the 1999 IEEE MTT-S International Microwave Symposium Digest 'The Magic Touch of Microwaves' ; Conference date: 13-06-1999 Through 19-06-1999",

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T1 - W-band InGaP/GaAs HBT MMIC frequency sources

AU - Heins, M. S.

AU - Juneja, T.

AU - Fendrich, J. A.

AU - Mu, J.

AU - Scott, D.

AU - Yang, Q.

AU - Hattendorf, M.

AU - Stillman, G. E.

AU - Feng, M.

PY - 1999

Y1 - 1999

N2 - W-band frequency sources using InGaP/GaAs HBTs are compared. The first is a fundamental frequency oscillator that provides 93 μW output power at 73.5 GHz in a compact (0.404 mm2) chip, while the other is a doubled 38 GHz VCO providing 75 μW output power and improved phase noise in a 5 times larger (2.139 mm2) chip. The trade-offs in both of these designs are discussed. It was also found that cooling the 38 GHz VCOs to 100 Kelvin and 200 Kelvin improved the phase noise performance.

AB - W-band frequency sources using InGaP/GaAs HBTs are compared. The first is a fundamental frequency oscillator that provides 93 μW output power at 73.5 GHz in a compact (0.404 mm2) chip, while the other is a doubled 38 GHz VCO providing 75 μW output power and improved phase noise in a 5 times larger (2.139 mm2) chip. The trade-offs in both of these designs are discussed. It was also found that cooling the 38 GHz VCOs to 100 Kelvin and 200 Kelvin improved the phase noise performance.

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M3 - Conference article

AN - SCOPUS:0033365528

SN - 0149-645X

VL - 1

SP - 239

EP - 242

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

T2 - Proceedings of the 1999 IEEE MTT-S International Microwave Symposium Digest 'The Magic Touch of Microwaves'

Y2 - 13 June 1999 through 19 June 1999

ER -

W-band InGaP/GaAs HBT MMIC frequency sources

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