Voltage modulation of a vertical cavity transistor laser via intra-cavity photon-assisted tunneling

M. K. Wu, M. Feng, N. Holonyak

Research output: Contribution to journalArticle

Abstract

We report the direct voltage modulated operation of a vertical cavity transistor laser via intra-cavity coherent signal photon-assisted tunneling. The reversed-bias base/collector junction of the transistor laser provides high input impedance for effective high speed direct voltage modulation. The optical L-V CE characteristics show that the emission intensity saturates and then decreases in laser intensity to half amplitude and broadens when V CE is switched from 3 to 6 V owing to intra-cavity photon-assisted tunneling at the base/collector junction. Correspondingly, the collector I C-V CE characteristics exhibit increased current at higher V CE.

Original languageEnglish (US)
Article number081102
JournalApplied Physics Letters
Volume101
Issue number8
DOIs
StatePublished - Aug 20 2012

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this