Voltage modulation of a vertical cavity transistor laser via intra-cavity photon-assisted tunneling

M. K. Wu; M. Feng; N. Holonyak

doi:10.1063/1.4745791

Voltage modulation of a vertical cavity transistor laser via intra-cavity photon-assisted tunneling

M. K. Wu, M. Feng, N. Holonyak

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We report the direct voltage modulated operation of a vertical cavity transistor laser via intra-cavity coherent signal photon-assisted tunneling. The reversed-bias base/collector junction of the transistor laser provides high input impedance for effective high speed direct voltage modulation. The optical L-V_CE characteristics show that the emission intensity saturates and then decreases in laser intensity to half amplitude and broadens when V _CE is switched from 3 to 6 V owing to intra-cavity photon-assisted tunneling at the base/collector junction. Correspondingly, the collector I _C-V_CE characteristics exhibit increased current at higher V_CE.

Original language	English (US)
Article number	081102
Journal	Applied Physics Letters
Volume	101
Issue number	8
DOIs	https://doi.org/10.1063/1.4745791
State	Published - Aug 20 2012

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4745791

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title = "Voltage modulation of a vertical cavity transistor laser via intra-cavity photon-assisted tunneling",

abstract = "We report the direct voltage modulated operation of a vertical cavity transistor laser via intra-cavity coherent signal photon-assisted tunneling. The reversed-bias base/collector junction of the transistor laser provides high input impedance for effective high speed direct voltage modulation. The optical L-VCE characteristics show that the emission intensity saturates and then decreases in laser intensity to half amplitude and broadens when V CE is switched from 3 to 6 V owing to intra-cavity photon-assisted tunneling at the base/collector junction. Correspondingly, the collector I C-VCE characteristics exhibit increased current at higher VCE.",

author = "Wu, {M. K.} and M. Feng and N. Holonyak",

note = "Funding Information: N. Holonyak, Jr. is grateful for the support of the John Bardeen Chair (Sony) of Electrical and Computer Engineering and Physics, and M. Feng for the support of the Nick Holonyak, Jr. Chair of Electrical and Computer Engineering. The authors would like to thank Dr. Michael Gerhold (Army Research Office) and acknowledge the support of Army Research Office (Grant No. W911NF-08-1-0469). The authors wish to thank Dr. Gabriel Walter (Quantum Electro Optical System) for providing VCTL crystals.",

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AU - Holonyak, N.

N1 - Funding Information: N. Holonyak, Jr. is grateful for the support of the John Bardeen Chair (Sony) of Electrical and Computer Engineering and Physics, and M. Feng for the support of the Nick Holonyak, Jr. Chair of Electrical and Computer Engineering. The authors would like to thank Dr. Michael Gerhold (Army Research Office) and acknowledge the support of Army Research Office (Grant No. W911NF-08-1-0469). The authors wish to thank Dr. Gabriel Walter (Quantum Electro Optical System) for providing VCTL crystals.

PY - 2012/8/20

Y1 - 2012/8/20

N2 - We report the direct voltage modulated operation of a vertical cavity transistor laser via intra-cavity coherent signal photon-assisted tunneling. The reversed-bias base/collector junction of the transistor laser provides high input impedance for effective high speed direct voltage modulation. The optical L-VCE characteristics show that the emission intensity saturates and then decreases in laser intensity to half amplitude and broadens when V CE is switched from 3 to 6 V owing to intra-cavity photon-assisted tunneling at the base/collector junction. Correspondingly, the collector I C-VCE characteristics exhibit increased current at higher VCE.

AB - We report the direct voltage modulated operation of a vertical cavity transistor laser via intra-cavity coherent signal photon-assisted tunneling. The reversed-bias base/collector junction of the transistor laser provides high input impedance for effective high speed direct voltage modulation. The optical L-VCE characteristics show that the emission intensity saturates and then decreases in laser intensity to half amplitude and broadens when V CE is switched from 3 to 6 V owing to intra-cavity photon-assisted tunneling at the base/collector junction. Correspondingly, the collector I C-VCE characteristics exhibit increased current at higher VCE.

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Voltage modulation of a vertical cavity transistor laser via intra-cavity photon-assisted tunneling

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