We report the direct voltage modulated operation of a vertical cavity transistor laser via intra-cavity coherent signal photon-assisted tunneling. The reversed-bias base/collector junction of the transistor laser provides high input impedance for effective high speed direct voltage modulation. The optical L-V CE characteristics show that the emission intensity saturates and then decreases in laser intensity to half amplitude and broadens when V CE is switched from 3 to 6 V owing to intra-cavity photon-assisted tunneling at the base/collector junction. Correspondingly, the collector I C-V CE characteristics exhibit increased current at higher V CE.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)