Voltage-in-Current Latency Insertion Method for Diodes and MOSFETs

Wei Chun Chin, Andrei Pashkovich, Kostas Malinauskas, Jose E. Schutt-Aine, Haidi Ibrahim, Nur Syazreen Ahmad, Patrick Goh

Research output: Contribution to journalArticlepeer-review

Abstract

This article presents the improved formulations for the latency insertion method (LIM) for diodes and MOSFETs utilizing the voltage-in-current framework. LIM is a fast circuit simulation algorithm, which computes the solutions to the voltages and currents in a circuit in a leapfrog manner, instead of a simultaneous matrix solution typically performed in the modified nodal analysis formalism. This allows LIM to have a far superior scaling with respect to the dimensions of the circuit. The formulations presented here have the advantage of not being limited by the stability condition in LIM and thus allow the simulations to be performed at larger time steps. Numerical examples are presented, which illustrate the improved performances of the developed formulations.

Original languageEnglish (US)
Article number9186102
Pages (from-to)1708-1720
Number of pages13
JournalIEEE Transactions on Components, Packaging and Manufacturing Technology
Volume10
Issue number10
DOIs
StatePublished - Oct 2020

Keywords

  • Circuit analysis
  • latency insertion method (LIM)
  • nonlinear

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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