@article{8ec20a1b26c945aea863303a722b9254,
title = "Voltage-controlled active mid-infrared plasmonic devices",
abstract = "We demonstrate active voltage-controlled spectral tuning of mid-infrared plasmonic structures. Extraordinary optical transmission gratings were fabricated on n-doped GaAs epilayers with a HfO2 gate dielectric between the grating and the doped semiconductor. The permittivity of the GaAs was tuned by depleting charge carriers below the top grating gate upon the application of a reverse bias to the gate. Devices were characterized both electrically and optically, and resonant transmission peak spectral and transmitted intensity shifts were achieved. Possible applications for, as well as the limitations of, the demonstrated technology are discussed.",
author = "K. Anglin and T. Ribaudo and Adams, {D. C.} and X. Qian and Goodhue, {W. D.} and S. Dooley and Shaner, {E. A.} and D. Wasserman",
note = "Funding Information: This work was supported by the National Science Foundation (Award #: 0925542), the AFOSR Young Investigator Program (Award #: FA9550-10-1-0226), and the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences through the Energy Frontier Research Center (EFRC) for Solid-State Lighting Science. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000. K. Anglin is grateful to the AFRL for summer funding under the STEP program at WPAFB.",
year = "2011",
month = jun,
day = "15",
doi = "10.1063/1.3600230",
language = "English (US)",
volume = "109",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "12",
}