Voltage and current modulation at 20 Gb/s of a transistor laser at room temperature

Rohan Bambery, Fei Tan, Milton Feng, John Michael Dallesasse, Nick Holonyak

Research output: Contribution to journalArticle

Abstract

Data are presented showing open-eye 20-Gb/s transmission for a quantum-well transistor laser operating at room temperature (25 C). The fast spontaneous recombination lifetime (sim30 ps) in the base region results in a resonance-free frequency response allowing demonstration of 20-Gb/s transmission with an I I TH=3. It is shown that higher temperature hastens the transition to the first excited state and improves bandwidth and eye-opening at low bias levels I}I TH=2). In addition, room temperature 20-Gb/s transmission through voltage modulation of a transistor laser via intracavity photon-assisted tunneling in the base-collector junction is reported.

Original languageEnglish (US)
Article number6480788
Pages (from-to)859-862
Number of pages4
JournalIEEE Photonics Technology Letters
Volume25
Issue number9
DOIs
StatePublished - May 3 2013

Keywords

  • 20-Gb/s modulation
  • high speed
  • laser
  • photon-assisted tunneling
  • transistor
  • voltage modulation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Voltage and current modulation at 20 Gb/s of a transistor laser at room temperature'. Together they form a unique fingerprint.

  • Cite this