Abstract
Data are presented showing open-eye 20-Gb/s transmission for a quantum-well transistor laser operating at room temperature (25 C). The fast spontaneous recombination lifetime (sim30 ps) in the base region results in a resonance-free frequency response allowing demonstration of 20-Gb/s transmission with an I I TH=3. It is shown that higher temperature hastens the transition to the first excited state and improves bandwidth and eye-opening at low bias levels I}I TH=2). In addition, room temperature 20-Gb/s transmission through voltage modulation of a transistor laser via intracavity photon-assisted tunneling in the base-collector junction is reported.
| Original language | English (US) |
|---|---|
| Article number | 6480788 |
| Pages (from-to) | 859-862 |
| Number of pages | 4 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 25 |
| Issue number | 9 |
| DOIs | |
| State | Published - 2013 |
Keywords
- 20-Gb/s modulation
- high speed
- laser
- photon-assisted tunneling
- transistor
- voltage modulation
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering