Visible spectrum native-oxide coupled-stripe In0.5(Al xGa1-x)0.5P-In0.5Ga0.5P quantum well heterostructure laser arrays

F. A. Kish; S. J. Caracci; N. Holonyak; S. A. Maranowski; J. M. Dallesasse; R. D. Burnham; S. C. Smith

doi:10.1063/1.105841

Visible spectrum native-oxide coupled-stripe In_0.5(Al _xGa_1-x)_0.5P-In_0.5Ga_0.5P quantum well heterostructure laser arrays

F. A. Kish, S. J. Caracci, N. Holonyak, S. A. Maranowski, J. M. Dallesasse, R. D. Burnham, S. C. Smith

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Abstract

Data are presented demonstrating the continuous (cw) operation (10-50 °C) of coupled-stripe In_0.5(Al_xGa_1-x) _0.5P-In_0.5Ga_0.5P multiple quantum well heterostructure (QWH) visible (λ∼655 nm) laser arrays. The ten stripe QWH arrays (3 μm emitters on 4 μm centers) are defined by "wet" oxidation (H₂O vapor in N₂ carrier gas, 550 °C) of the high gap In_0.5(Al_xGa_1-x)_0.5P upper confining layer outside of the active stripes. The gain-guided arrays exhibit relatively low cw 20 °C threshold current densities (∼1.6 kA/cm², ∼450 μm cavity) and high output powers of 25 mW per uncoated facet (cw, 20 °C). Optical coupling between stripes results in a near diffraction-limited single-lobe far-field pattern indicative of oscillation in the lowest order supermode of the array (in-phase operation).

Original language	English (US)
Pages (from-to)	2883-2885
Number of pages	3
Journal	Applied Physics Letters
Volume	59
Issue number	22
DOIs	https://doi.org/10.1063/1.105841
State	Published - 1991
Externally published	Yes

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Physics and Astronomy (miscellaneous)

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@article{73afe5cdbbc9442496557cb21e19d45c,

title = "Visible spectrum native-oxide coupled-stripe In0.5(Al xGa1-x)0.5P-In0.5Ga0.5P quantum well heterostructure laser arrays",

abstract = "Data are presented demonstrating the continuous (cw) operation (10-50 °C) of coupled-stripe In0.5(AlxGa1-x) 0.5P-In0.5Ga0.5P multiple quantum well heterostructure (QWH) visible (λ∼655 nm) laser arrays. The ten stripe QWH arrays (3 μm emitters on 4 μm centers) are defined by {"}wet{"} oxidation (H2O vapor in N2 carrier gas, 550 °C) of the high gap In0.5(AlxGa1-x)0.5P upper confining layer outside of the active stripes. The gain-guided arrays exhibit relatively low cw 20 °C threshold current densities (∼1.6 kA/cm2, ∼450 μm cavity) and high output powers of 25 mW per uncoated facet (cw, 20 °C). Optical coupling between stripes results in a near diffraction-limited single-lobe far-field pattern indicative of oscillation in the lowest order supermode of the array (in-phase operation).",

author = "Kish, {F. A.} and Caracci, {S. J.} and N. Holonyak and Maranowski, {S. A.} and Dallesasse, {J. M.} and Burnham, {R. D.} and Smith, {S. C.}",

year = "1991",

doi = "10.1063/1.105841",

language = "English (US)",

volume = "59",

pages = "2883--2885",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "22",

}

TY - JOUR

T1 - Visible spectrum native-oxide coupled-stripe In0.5(Al xGa1-x)0.5P-In0.5Ga0.5P quantum well heterostructure laser arrays

AU - Kish, F. A.

AU - Caracci, S. J.

AU - Holonyak, N.

AU - Maranowski, S. A.

AU - Dallesasse, J. M.

AU - Burnham, R. D.

AU - Smith, S. C.

PY - 1991

Y1 - 1991

N2 - Data are presented demonstrating the continuous (cw) operation (10-50 °C) of coupled-stripe In0.5(AlxGa1-x) 0.5P-In0.5Ga0.5P multiple quantum well heterostructure (QWH) visible (λ∼655 nm) laser arrays. The ten stripe QWH arrays (3 μm emitters on 4 μm centers) are defined by "wet" oxidation (H2O vapor in N2 carrier gas, 550 °C) of the high gap In0.5(AlxGa1-x)0.5P upper confining layer outside of the active stripes. The gain-guided arrays exhibit relatively low cw 20 °C threshold current densities (∼1.6 kA/cm2, ∼450 μm cavity) and high output powers of 25 mW per uncoated facet (cw, 20 °C). Optical coupling between stripes results in a near diffraction-limited single-lobe far-field pattern indicative of oscillation in the lowest order supermode of the array (in-phase operation).

AB - Data are presented demonstrating the continuous (cw) operation (10-50 °C) of coupled-stripe In0.5(AlxGa1-x) 0.5P-In0.5Ga0.5P multiple quantum well heterostructure (QWH) visible (λ∼655 nm) laser arrays. The ten stripe QWH arrays (3 μm emitters on 4 μm centers) are defined by "wet" oxidation (H2O vapor in N2 carrier gas, 550 °C) of the high gap In0.5(AlxGa1-x)0.5P upper confining layer outside of the active stripes. The gain-guided arrays exhibit relatively low cw 20 °C threshold current densities (∼1.6 kA/cm2, ∼450 μm cavity) and high output powers of 25 mW per uncoated facet (cw, 20 °C). Optical coupling between stripes results in a near diffraction-limited single-lobe far-field pattern indicative of oscillation in the lowest order supermode of the array (in-phase operation).

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