Visible spectrum light-emitting transistors

F. Dixon, R. Chan, G. Walter, N. Holonyak, M. Feng, X. B. Zhang, J. H. Ryou, R. D. Dupuis

Research output: Contribution to journalArticlepeer-review

Abstract

Visible radiative recombination in the base layer of AlGaInP/InGaP light-emitting transistors (LETs) is reported. For this form of transistor, which previously has not existed, and with an emitter area of 100×100 μm 2, we demonstrate a current gain β (β≡Δ I C/ΔI B) of 3.5 for the device operating in the common-emitter configuration. The LET In 0.49Ga 0.51P base recombination radiation is centered in the visible at λ=650 nm (red emission).

Original languageEnglish (US)
Article number012108
JournalApplied Physics Letters
Volume88
Issue number1
DOIs
StatePublished - Apr 10 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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