Visible spectrum light-emitting transistors

F. Dixon; R. Chan; G. Walter; N. Holonyak; M. Feng; X. B. Zhang; J. H. Ryou; R. D. Dupuis

doi:10.1063/1.2158704

Visible spectrum light-emitting transistors

F. Dixon, R. Chan, G. Walter, N. Holonyak, M. Feng, X. B. Zhang, J. H. Ryou, R. D. Dupuis

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Visible radiative recombination in the base layer of AlGaInP/InGaP light-emitting transistors (LETs) is reported. For this form of transistor, which previously has not existed, and with an emitter area of 100×100 μm ², we demonstrate a current gain β (β≡Δ I _C/ΔI _B) of 3.5 for the device operating in the common-emitter configuration. The LET In _0.49Ga _0.51P base recombination radiation is centered in the visible at λ=650 nm (red emission).

Original language	English (US)
Article number	012108
Journal	Applied Physics Letters
Volume	88
Issue number	1
DOIs	https://doi.org/10.1063/1.2158704
State	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2158704

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title = "Visible spectrum light-emitting transistors",

abstract = "Visible radiative recombination in the base layer of AlGaInP/InGaP light-emitting transistors (LETs) is reported. For this form of transistor, which previously has not existed, and with an emitter area of 100×100 μm 2, we demonstrate a current gain β (β≡Δ I C/ΔI B) of 3.5 for the device operating in the common-emitter configuration. The LET In 0.49Ga 0.51P base recombination radiation is centered in the visible at λ=650 nm (red emission).",

author = "F. Dixon and R. Chan and G. Walter and N. Holonyak and M. Feng and Zhang, {X. B.} and Ryou, {J. H.} and Dupuis, {R. D.}",

note = "Funding Information: The authors are grateful for the support of DARPA Contract No. HR0011-04-1-0034 (Hyper-Uniform Nanophotonics Technologies, HUNT Center). One of the authors (M. F.) is grateful for the support of the Nick Holonyak Jr. Chair, and N. Holonyak, Jr. for the John Bardeen Chair (Sony). Another author (R. D.) acknowledges the support of the Steve W. Chaddick Endowed Chair in Electro-Optics.",

year = "2006",

doi = "10.1063/1.2158704",

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journal = "Applied Physics Letters",

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T1 - Visible spectrum light-emitting transistors

AU - Dixon, F.

AU - Chan, R.

AU - Walter, G.

AU - Holonyak, N.

AU - Feng, M.

AU - Zhang, X. B.

AU - Ryou, J. H.

AU - Dupuis, R. D.

N1 - Funding Information: The authors are grateful for the support of DARPA Contract No. HR0011-04-1-0034 (Hyper-Uniform Nanophotonics Technologies, HUNT Center). One of the authors (M. F.) is grateful for the support of the Nick Holonyak Jr. Chair, and N. Holonyak, Jr. for the John Bardeen Chair (Sony). Another author (R. D.) acknowledges the support of the Steve W. Chaddick Endowed Chair in Electro-Optics.

PY - 2006

Y1 - 2006

N2 - Visible radiative recombination in the base layer of AlGaInP/InGaP light-emitting transistors (LETs) is reported. For this form of transistor, which previously has not existed, and with an emitter area of 100×100 μm 2, we demonstrate a current gain β (β≡Δ I C/ΔI B) of 3.5 for the device operating in the common-emitter configuration. The LET In 0.49Ga 0.51P base recombination radiation is centered in the visible at λ=650 nm (red emission).

AB - Visible radiative recombination in the base layer of AlGaInP/InGaP light-emitting transistors (LETs) is reported. For this form of transistor, which previously has not existed, and with an emitter area of 100×100 μm 2, we demonstrate a current gain β (β≡Δ I C/ΔI B) of 3.5 for the device operating in the common-emitter configuration. The LET In 0.49Ga 0.51P base recombination radiation is centered in the visible at λ=650 nm (red emission).

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Visible spectrum light-emitting transistors

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