Visible radiative recombination in the base layer of AlGaInP/InGaP light-emitting transistors (LETs) is reported. For this form of transistor, which previously has not existed, and with an emitter area of 100×100 μm 2, we demonstrate a current gain β (β≡Δ I C/ΔI B) of 3.5 for the device operating in the common-emitter configuration. The LET In 0.49Ga 0.51P base recombination radiation is centered in the visible at λ=650 nm (red emission).
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)