@article{1ae95c88481d419a85321ed9ce2d20f9,
title = "Visible spectrum light-emitting transistors",
abstract = "Visible radiative recombination in the base layer of AlGaInP/InGaP light-emitting transistors (LETs) is reported. For this form of transistor, which previously has not existed, and with an emitter area of 100×100 μm 2, we demonstrate a current gain β (β≡Δ I C/ΔI B) of 3.5 for the device operating in the common-emitter configuration. The LET In 0.49Ga 0.51P base recombination radiation is centered in the visible at λ=650 nm (red emission).",
author = "F. Dixon and R. Chan and G. Walter and N. Holonyak and M. Feng and Zhang, {X. B.} and Ryou, {J. H.} and Dupuis, {R. D.}",
note = "Funding Information: The authors are grateful for the support of DARPA Contract No. HR0011-04-1-0034 (Hyper-Uniform Nanophotonics Technologies, HUNT Center). One of the authors (M. F.) is grateful for the support of the Nick Holonyak Jr. Chair, and N. Holonyak, Jr. for the John Bardeen Chair (Sony). Another author (R. D.) acknowledges the support of the Steve W. Chaddick Endowed Chair in Electro-Optics.",
year = "2006",
doi = "10.1063/1.2158704",
language = "English (US)",
volume = "88",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "1",
}