Visible spectrum light-emitting transistors

F. Dixon; R. Chan; G. Walter; N. Holonyak; M. Feng; X. B. Zhang; J. H. Ryou; R. D. Dupuis

doi:10.1063/1.2158704

Visible spectrum light-emitting transistors

F. Dixon, R. Chan, G. Walter, N. Holonyak, M. Feng, X. B. Zhang, J. H. Ryou, R. D. Dupuis

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Visible radiative recombination in the base layer of AlGaInP/InGaP light-emitting transistors (LETs) is reported. For this form of transistor, which previously has not existed, and with an emitter area of 100×100 μm ², we demonstrate a current gain β (β≡Δ I _C/ΔI _B) of 3.5 for the device operating in the common-emitter configuration. The LET In _0.49Ga _0.51P base recombination radiation is centered in the visible at λ=650 nm (red emission).

Original language	English (US)
Article number	012108
Journal	Applied Physics Letters
Volume	88
Issue number	1
DOIs	https://doi.org/10.1063/1.2158704
State	Published - Apr 10 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2158704

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abstract = "Visible radiative recombination in the base layer of AlGaInP/InGaP light-emitting transistors (LETs) is reported. For this form of transistor, which previously has not existed, and with an emitter area of 100×100 μm 2, we demonstrate a current gain β (β≡Δ I C/ΔI B) of 3.5 for the device operating in the common-emitter configuration. The LET In 0.49Ga 0.51P base recombination radiation is centered in the visible at λ=650 nm (red emission).",

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AU - Dixon, F.

AU - Chan, R.

AU - Walter, G.

AU - Holonyak, N.

AU - Feng, M.

AU - Zhang, X. B.

AU - Ryou, J. H.

AU - Dupuis, R. D.

PY - 2006/4/10

Y1 - 2006/4/10

N2 - Visible radiative recombination in the base layer of AlGaInP/InGaP light-emitting transistors (LETs) is reported. For this form of transistor, which previously has not existed, and with an emitter area of 100×100 μm 2, we demonstrate a current gain β (β≡Δ I C/ΔI B) of 3.5 for the device operating in the common-emitter configuration. The LET In 0.49Ga 0.51P base recombination radiation is centered in the visible at λ=650 nm (red emission).

AB - Visible radiative recombination in the base layer of AlGaInP/InGaP light-emitting transistors (LETs) is reported. For this form of transistor, which previously has not existed, and with an emitter area of 100×100 μm 2, we demonstrate a current gain β (β≡Δ I C/ΔI B) of 3.5 for the device operating in the common-emitter configuration. The LET In 0.49Ga 0.51P base recombination radiation is centered in the visible at λ=650 nm (red emission).

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