VERY HIGH RESOLUTION ION BEAM LITHOGRAPHY.

I. Adesida, A. Muray, M. Isaacson, E. D. Wolf

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A description of ion beam lithography (IBL) is presented. The resolution limit of IBL is estimated to be less than 10 nm. Replication of very high resolution transmission masks with protons is demonstrated with features as small as 30 nm in PMMA.

Original languageEnglish (US)
Title of host publicationUnknown Host Publication Title
PublisherAcademic Press
Pages151-156
Number of pages6
ISBN (Print)0120449803
StatePublished - 1983

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint

Dive into the research topics of 'VERY HIGH RESOLUTION ION BEAM LITHOGRAPHY.'. Together they form a unique fingerprint.

Cite this