Abstract
A description of ion beam lithography (IBL) is presented. The resolution limit of IBL is estimated to be less than 10 nm. Replication of very high resolution transmission masks with protons is demonstrated with features as small as 30 nm in PMMA.
| Original language | English (US) |
|---|---|
| Title of host publication | Unknown Host Publication Title |
| Publisher | Academic Press |
| Pages | 151-156 |
| Number of pages | 6 |
| ISBN (Print) | 0120449803 |
| State | Published - 1983 |
| Externally published | Yes |
ASJC Scopus subject areas
- General Engineering