Very-High-Frequency Resonant Boost Converters

Robert C.N. Pilawa-Podgurski, Anthony D. Sagneri, David J. Perreault

Research output: Contribution to journalArticlepeer-review

Abstract

This paper presents a resonant boost topology suitable for very-high-frequency (VHF, 30-300 MHz) dc-dc power conversion. The proposed design features low device voltage stress, high efficiency over a wide load range, and excellent transient performance. Two experimental prototypes have been built and evaluated. One is a 110-MHz, 23-W converter that uses a highperformance RF lateral DMOSFET. The converter achieves higher than 87% efficiency at nominal input and output voltages, and maintains good efficiency down to 5% of full load. The second implementation, aimed toward integration, is a 50-MHz, 17-W converter that uses a transistor from a 50-V integrated power process. In addition, two resonant gate drive schemes suitable for VHF operation are presented, both of which provide rapid startup and low-loss operation. Both converters regulate the output using high- bandwidth, on-off hysteretic control, which enables fast transient response and efficient light-load operation. The low energy storage requirements of the converters allow the use of aircore inductors in both designs, thereby eliminating magnetic core loss and introducing the possibility of easy integration.

Original languageEnglish (US)
Pages (from-to)1654-1665
Number of pages12
JournalIEEE Transactions on Power Electronics
Volume24
Issue number6
DOIs
StatePublished - Jun 2009

Keywords

  • Class-E inverter
  • class-F inverter
  • class-F power amplifier
  • harmonic peaking
  • resonant boost converter
  • resonant dc-dc converter
  • resonant gate drive
  • resonant rectifier
  • self-oscillating gate drive
  • very-high-frequency (VHF) integrated power converter

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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