Vertically stacked individually tunable nanowire field effect transistors for low power operation with ultrahigh radio frequency linearity

In this letter, we present an experimentally feasible design of vertically stacked nanowire (NW) gate-all-around (GAA) metal-oxide-semiconductor field effect transistors (MOSFETs) for operation in radio-frequency (RF) circuits with ultrahigh linearity. We demonstrate that by properly tuning the diameters and doping levels of individual NWs in the vertical stack, a much higher third order intercept point is achieved compared to single nanowire designs, without degrading other performance metrics. This methodology for improving linearity overcomes the design tradeoff between RF linearity and power supply, and should be applicable to multi-stack nanowire GAA MOSFETs of all materials.