Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?

Carlton M. Osburn, Indong Kim, Sungkee Han, Indranil De, Kam F. Yee, Shyam Gannavaram, Sung Joo Lee, Chung Ho Lee, Zhijiong J. Luo, Wenjuan Zhu, John R. Hauser, Dim Lee Kwong, Gerald Lucovsky, T. P. Ma, Mehmet C. Öztürk

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Engineering

Material Science