Vertical thinking in blue light emitting diodes: GaN-on-graphene technology

Can Bayram, J. Kim, C. W. Cheng, J. Ott, K. B. Reuter, S. W. Bedell, D. K. Sadana, H. Park, C. Dimitrakopoulos

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, we show that a 2D cleave layer (such as epitaxial graphene on SiC) can be used for precise release of GaNbased light emitting diodes (LEDs) from the LED-substrate interface. We demonstrate the thinnest GaN-based blue LED and report on the initial electrical and optical characteristics. Our LED device employs vertical architecture: promising excellent current spreading, improved heat dissipation, and high light extraction with respect to the lateral one. Compared to conventional LED layer release techniques used for forming vertical LEDs (such as laser-liftoff and chemical lift-off techniques), our process distinguishes itself with being wafer-scalable (large area devices are possible) and substrate reuse opportunity.

Original languageEnglish (US)
Title of host publicationOxide-Based Materials and Devices VI
EditorsFerechteh H. Teherani, David C. Look, David J. Rogers
PublisherSPIE
ISBN (Electronic)9781628414547
DOIs
StatePublished - Jan 1 2015
EventOxide-Based Materials and Devices VI - San Francisco, United States
Duration: Feb 8 2015Feb 11 2015

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9364
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

OtherOxide-Based Materials and Devices VI
CountryUnited States
CitySan Francisco
Period2/8/152/11/15

Keywords

  • Gallium Nitride
  • Graphene
  • light emitting diode

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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