Vertical scaling of 0.25-μm emitter InP/InGaAs single heterojunction bipolar transistors with f_T of 452 GHz

Keyphrases

• InGaAs 100%
• Vertical Scaling 100%
• Single Heterojunction Bipolar Transistor 100%
• Transistor 50%
• Radio Frequency 50%
• Submicron 50%
• Current Gain Cutoff Frequency 50%
• Current Density 50%
• High-frequency Performance 50%
• Epitaxial Structure 50%
• BVCEO 50%
• Frequency Parameter 50%
• Delay Component 50%

Engineering

• Indium Gallium Arsenide 100%
• Heterojunctions 100%
• Bipolar Transistor 100%
• Radio Frequency 50%
• Current Gain 50%
• Cutoff Frequency 50%