Vertical scaling of 0.25-μm emitter InP/InGaAs single heterojunction bipolar transistors with fT of 452 GHz

Walid Hafez, Jie Wei Lai, Milton Feng

Research output: Contribution to journalLetter

Abstract

Vertical scaling of the epitaxial structure has allowed submicron InP/InGaAs-based single heterojunction bipolar transistors (SHBTs) to achieve record high-frequency performance. The 0.25 × 16 μm2 transistors, featuring a 25-nm base and a 100-nm collector, display current gain cut-off frequencies fT of 452 GHz. The devices operate at current densities above 1000 kA/cm2 and have BVCEO breakdowns of 2.1 V. A detailed analysis of device radio frequency (RF) parameters, and delay components with respect to scaling of the collector thickness is presented.

Original languageEnglish (US)
Pages (from-to)436-438
Number of pages3
JournalIEEE Electron Device Letters
Volume24
Issue number7
DOIs
StatePublished - Jul 1 2003

Keywords

  • Heterojunction bipolar transistors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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