Vertical scaling of 0.25-μm emitter InP/InGaAs single heterojunction bipolar transistors with fT of 452 GHz

Walid Hafez; Jie Wei Lai; Milton Feng

doi:10.1109/LED.2003.814990

Vertical scaling of 0.25-μm emitter InP/InGaAs single heterojunction bipolar transistors with f_T of 452 GHz

Walid Hafez, Jie Wei Lai, Milton Feng

Electrical and Computer Engineering

Research output: Contribution to journal › Letter › peer-review

Abstract

Vertical scaling of the epitaxial structure has allowed submicron InP/InGaAs-based single heterojunction bipolar transistors (SHBTs) to achieve record high-frequency performance. The 0.25 × 16 μm² transistors, featuring a 25-nm base and a 100-nm collector, display current gain cut-off frequencies f_T of 452 GHz. The devices operate at current densities above 1000 kA/cm² and have BV_CEO breakdowns of 2.1 V. A detailed analysis of device radio frequency (RF) parameters, and delay components with respect to scaling of the collector thickness is presented.

Original language	English (US)
Pages (from-to)	436-438
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	24
Issue number	7
DOIs	https://doi.org/10.1109/LED.2003.814990
State	Published - Jul 2003

Keywords

Heterojunction bipolar transistors

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Online availability

10.1109/LED.2003.814990

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Cite this

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title = "Vertical scaling of 0.25-μm emitter InP/InGaAs single heterojunction bipolar transistors with fT of 452 GHz",

abstract = "Vertical scaling of the epitaxial structure has allowed submicron InP/InGaAs-based single heterojunction bipolar transistors (SHBTs) to achieve record high-frequency performance. The 0.25 × 16 μm2 transistors, featuring a 25-nm base and a 100-nm collector, display current gain cut-off frequencies fT of 452 GHz. The devices operate at current densities above 1000 kA/cm2 and have BVCEO breakdowns of 2.1 V. A detailed analysis of device radio frequency (RF) parameters, and delay components with respect to scaling of the collector thickness is presented.",

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author = "Walid Hafez and Lai, {Jie Wei} and Milton Feng",

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language = "English (US)",

volume = "24",

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T1 - Vertical scaling of 0.25-μm emitter InP/InGaAs single heterojunction bipolar transistors with fT of 452 GHz

AU - Hafez, Walid

AU - Lai, Jie Wei

AU - Feng, Milton

PY - 2003/7

Y1 - 2003/7

N2 - Vertical scaling of the epitaxial structure has allowed submicron InP/InGaAs-based single heterojunction bipolar transistors (SHBTs) to achieve record high-frequency performance. The 0.25 × 16 μm2 transistors, featuring a 25-nm base and a 100-nm collector, display current gain cut-off frequencies fT of 452 GHz. The devices operate at current densities above 1000 kA/cm2 and have BVCEO breakdowns of 2.1 V. A detailed analysis of device radio frequency (RF) parameters, and delay components with respect to scaling of the collector thickness is presented.

AB - Vertical scaling of the epitaxial structure has allowed submicron InP/InGaAs-based single heterojunction bipolar transistors (SHBTs) to achieve record high-frequency performance. The 0.25 × 16 μm2 transistors, featuring a 25-nm base and a 100-nm collector, display current gain cut-off frequencies fT of 452 GHz. The devices operate at current densities above 1000 kA/cm2 and have BVCEO breakdowns of 2.1 V. A detailed analysis of device radio frequency (RF) parameters, and delay components with respect to scaling of the collector thickness is presented.

KW - Heterojunction bipolar transistors

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DO - 10.1109/LED.2003.814990

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JO - IEEE Electron Device Letters

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