Vertical scaling of the epitaxial structure has allowed submicron InP/InGaAs-based single heterojunction bipolar transistors (SHBTs) to achieve record high-frequency performance. The 0.25 × 16 μm2 transistors, featuring a 25-nm base and a 100-nm collector, display current gain cut-off frequencies fT of 452 GHz. The devices operate at current densities above 1000 kA/cm2 and have BVCEO breakdowns of 2.1 V. A detailed analysis of device radio frequency (RF) parameters, and delay components with respect to scaling of the collector thickness is presented.
- Heterojunction bipolar transistors
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering