Vertical scaling of 0.25-μm emitter InP/InGaAs single heterojunction bipolar transistors with fT of 452 GHz

Walid Hafez, Jie Wei Lai, Milton Feng

Research output: Contribution to journalLetter

Abstract

Vertical scaling of the epitaxial structure has allowed submicron InP/InGaAs-based single heterojunction bipolar transistors (SHBTs) to achieve record high-frequency performance. The 0.25 × 16 μm2 transistors, featuring a 25-nm base and a 100-nm collector, display current gain cut-off frequencies fT of 452 GHz. The devices operate at current densities above 1000 kA/cm2 and have BVCEO breakdowns of 2.1 V. A detailed analysis of device radio frequency (RF) parameters, and delay components with respect to scaling of the collector thickness is presented.

Original languageEnglish (US)
Pages (from-to)436-438
Number of pages3
JournalIEEE Electron Device Letters
Volume24
Issue number7
DOIs
StatePublished - Jul 1 2003

Fingerprint

Heterojunction bipolar transistors
Cutoff frequency
Transistors
Current density

Keywords

  • Heterojunction bipolar transistors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Vertical scaling of 0.25-μm emitter InP/InGaAs single heterojunction bipolar transistors with fT of 452 GHz. / Hafez, Walid; Lai, Jie Wei; Feng, Milton.

In: IEEE Electron Device Letters, Vol. 24, No. 7, 01.07.2003, p. 436-438.

Research output: Contribution to journalLetter

@article{75632b275f764946ab230914d8e78b84,
title = "Vertical scaling of 0.25-μm emitter InP/InGaAs single heterojunction bipolar transistors with fT of 452 GHz",
abstract = "Vertical scaling of the epitaxial structure has allowed submicron InP/InGaAs-based single heterojunction bipolar transistors (SHBTs) to achieve record high-frequency performance. The 0.25 × 16 μm2 transistors, featuring a 25-nm base and a 100-nm collector, display current gain cut-off frequencies fT of 452 GHz. The devices operate at current densities above 1000 kA/cm2 and have BVCEO breakdowns of 2.1 V. A detailed analysis of device radio frequency (RF) parameters, and delay components with respect to scaling of the collector thickness is presented.",
keywords = "Heterojunction bipolar transistors",
author = "Walid Hafez and Lai, {Jie Wei} and Milton Feng",
year = "2003",
month = "7",
day = "1",
doi = "10.1109/LED.2003.814990",
language = "English (US)",
volume = "24",
pages = "436--438",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "7",

}

TY - JOUR

T1 - Vertical scaling of 0.25-μm emitter InP/InGaAs single heterojunction bipolar transistors with fT of 452 GHz

AU - Hafez, Walid

AU - Lai, Jie Wei

AU - Feng, Milton

PY - 2003/7/1

Y1 - 2003/7/1

N2 - Vertical scaling of the epitaxial structure has allowed submicron InP/InGaAs-based single heterojunction bipolar transistors (SHBTs) to achieve record high-frequency performance. The 0.25 × 16 μm2 transistors, featuring a 25-nm base and a 100-nm collector, display current gain cut-off frequencies fT of 452 GHz. The devices operate at current densities above 1000 kA/cm2 and have BVCEO breakdowns of 2.1 V. A detailed analysis of device radio frequency (RF) parameters, and delay components with respect to scaling of the collector thickness is presented.

AB - Vertical scaling of the epitaxial structure has allowed submicron InP/InGaAs-based single heterojunction bipolar transistors (SHBTs) to achieve record high-frequency performance. The 0.25 × 16 μm2 transistors, featuring a 25-nm base and a 100-nm collector, display current gain cut-off frequencies fT of 452 GHz. The devices operate at current densities above 1000 kA/cm2 and have BVCEO breakdowns of 2.1 V. A detailed analysis of device radio frequency (RF) parameters, and delay components with respect to scaling of the collector thickness is presented.

KW - Heterojunction bipolar transistors

UR - http://www.scopus.com/inward/record.url?scp=0042888873&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0042888873&partnerID=8YFLogxK

U2 - 10.1109/LED.2003.814990

DO - 10.1109/LED.2003.814990

M3 - Letter

AN - SCOPUS:0042888873

VL - 24

SP - 436

EP - 438

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 7

ER -