Vertical p-i-n polysilicon diode with antifuse for stackable field-programmable ROM

S. B. Herner, A. Bandyopadhyay, S. V. Dunton, S. V. Eckert, J. Gu, K. J. Hsia, S. Hu., C. Jahn, D. Kidwell, M. Konevecki, M. Mahajani, K. Park, C. Petti, S. R. Radigan, U. Raghuram, J. Vienna, M. A. Vyvoda

Research output: Contribution to journalLetter

Abstract

A field-programmable, stackable memory cell using 0.15-μm technology is demonstrated. Vertical polycrystalline silicon diodes are stacked on top of one another, with tungsten (with TiN adhesion film) interconnect wires. An SiO2 antifuse film separates the top of each diode from the TiN-W films. The cell is programmed when sufficient biasing voltage is applied to break down the antifuse, connecting the diode to tungsten. The cell is unprogrammed when the antifuse is intact. Cell fabrication and performance are described.

Original languageEnglish (US)
Pages (from-to)271-272
Number of pages2
JournalIEEE Electron Device Letters
Volume25
Issue number5
DOIs
StatePublished - May 1 2004

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Keywords

  • Antifuse
  • Breakdown
  • P-i-n diode
  • Polysilicon
  • Read-only memories (ROMs)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Herner, S. B., Bandyopadhyay, A., Dunton, S. V., Eckert, S. V., Gu, J., Hsia, K. J., Hu., S., Jahn, C., Kidwell, D., Konevecki, M., Mahajani, M., Park, K., Petti, C., Radigan, S. R., Raghuram, U., Vienna, J., & Vyvoda, M. A. (2004). Vertical p-i-n polysilicon diode with antifuse for stackable field-programmable ROM. IEEE Electron Device Letters, 25(5), 271-272. https://doi.org/10.1109/LED.2004.827287