Vertical p-i-n polysilicon diode with antifuse for stackable field-programmable ROM

S. B. Herner; A. Bandyopadhyay; S. V. Dunton; S. V. Eckert; J. Gu; K. J. Hsia; S. Hu.; C. Jahn; D. Kidwell; M. Konevecki; M. Mahajani; K. Park; C. Petti; S. R. Radigan; U. Raghuram; J. Vienna; M. A. Vyvoda

doi:10.1109/LED.2004.827287

Vertical p-i-n polysilicon diode with antifuse for stackable field-programmable ROM

S. B. Herner, A. Bandyopadhyay, S. V. Dunton, S. V. Eckert, J. Gu, K. J. Hsia, S. Hu., C. Jahn, D. Kidwell, M. Konevecki, M. Mahajani, K. Park, C. Petti, S. R. Radigan, U. Raghuram, J. Vienna, M. A. Vyvoda

Research output: Contribution to journal › Letter › peer-review

Abstract

A field-programmable, stackable memory cell using 0.15-μm technology is demonstrated. Vertical polycrystalline silicon diodes are stacked on top of one another, with tungsten (with TiN adhesion film) interconnect wires. An SiO₂ antifuse film separates the top of each diode from the TiN-W films. The cell is programmed when sufficient biasing voltage is applied to break down the antifuse, connecting the diode to tungsten. The cell is unprogrammed when the antifuse is intact. Cell fabrication and performance are described.

Original language	English (US)
Pages (from-to)	271-272
Number of pages	2
Journal	IEEE Electron Device Letters
Volume	25
Issue number	5
DOIs	https://doi.org/10.1109/LED.2004.827287
State	Published - May 2004
Externally published	Yes

Keywords

Antifuse
Breakdown
P-i-n diode
Polysilicon
Read-only memories (ROMs)

ASJC Scopus subject areas

Electrical and Electronic Engineering

Online availability

10.1109/LED.2004.827287

Library availability

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Herner, S. B., Bandyopadhyay, A., Dunton, S. V., Eckert, S. V., Gu, J., Hsia, K. J., Hu., S., Jahn, C., Kidwell, D., Konevecki, M., Mahajani, M., Park, K., Petti, C., Radigan, S. R., Raghuram, U., Vienna, J., & Vyvoda, M. A. (2004). Vertical p-i-n polysilicon diode with antifuse for stackable field-programmable ROM. IEEE Electron Device Letters, 25(5), 271-272. https://doi.org/10.1109/LED.2004.827287

Herner, SB, Bandyopadhyay, A, Dunton, SV, Eckert, SV, Gu, J, Hsia, KJ, Hu., S, Jahn, C, Kidwell, D, Konevecki, M, Mahajani, M, Park, K, Petti, C, Radigan, SR, Raghuram, U, Vienna, J & Vyvoda, MA 2004, 'Vertical p-i-n polysilicon diode with antifuse for stackable field-programmable ROM', IEEE Electron Device Letters, vol. 25, no. 5, pp. 271-272. https://doi.org/10.1109/LED.2004.827287

@article{648805dda11a410daee0228c6a311784,

title = "Vertical p-i-n polysilicon diode with antifuse for stackable field-programmable ROM",

abstract = "A field-programmable, stackable memory cell using 0.15-μm technology is demonstrated. Vertical polycrystalline silicon diodes are stacked on top of one another, with tungsten (with TiN adhesion film) interconnect wires. An SiO2 antifuse film separates the top of each diode from the TiN-W films. The cell is programmed when sufficient biasing voltage is applied to break down the antifuse, connecting the diode to tungsten. The cell is unprogrammed when the antifuse is intact. Cell fabrication and performance are described.",

keywords = "Antifuse, Breakdown, P-i-n diode, Polysilicon, Read-only memories (ROMs)",

author = "Herner, {S. B.} and A. Bandyopadhyay and Dunton, {S. V.} and Eckert, {S. V.} and J. Gu and Hsia, {K. J.} and S. Hu. and C. Jahn and D. Kidwell and M. Konevecki and M. Mahajani and K. Park and C. Petti and Radigan, {S. R.} and U. Raghuram and J. Vienna and Vyvoda, {M. A.}",

year = "2004",

month = may,

doi = "10.1109/LED.2004.827287",

language = "English (US)",

volume = "25",

pages = "271--272",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

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TY - JOUR

T1 - Vertical p-i-n polysilicon diode with antifuse for stackable field-programmable ROM

AU - Herner, S. B.

AU - Bandyopadhyay, A.

AU - Dunton, S. V.

AU - Eckert, S. V.

AU - Gu, J.

AU - Hsia, K. J.

AU - Hu., S.

AU - Jahn, C.

AU - Kidwell, D.

AU - Konevecki, M.

AU - Mahajani, M.

AU - Park, K.

AU - Petti, C.

AU - Radigan, S. R.

AU - Raghuram, U.

AU - Vienna, J.

AU - Vyvoda, M. A.

PY - 2004/5

Y1 - 2004/5

N2 - A field-programmable, stackable memory cell using 0.15-μm technology is demonstrated. Vertical polycrystalline silicon diodes are stacked on top of one another, with tungsten (with TiN adhesion film) interconnect wires. An SiO2 antifuse film separates the top of each diode from the TiN-W films. The cell is programmed when sufficient biasing voltage is applied to break down the antifuse, connecting the diode to tungsten. The cell is unprogrammed when the antifuse is intact. Cell fabrication and performance are described.

AB - A field-programmable, stackable memory cell using 0.15-μm technology is demonstrated. Vertical polycrystalline silicon diodes are stacked on top of one another, with tungsten (with TiN adhesion film) interconnect wires. An SiO2 antifuse film separates the top of each diode from the TiN-W films. The cell is programmed when sufficient biasing voltage is applied to break down the antifuse, connecting the diode to tungsten. The cell is unprogrammed when the antifuse is intact. Cell fabrication and performance are described.

KW - Antifuse

KW - Breakdown

KW - P-i-n diode

KW - Polysilicon

KW - Read-only memories (ROMs)

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UR - http://www.scopus.com/inward/citedby.url?scp=2442610851&partnerID=8YFLogxK

U2 - 10.1109/LED.2004.827287

DO - 10.1109/LED.2004.827287

M3 - Letter

AN - SCOPUS:2442610851

SN - 0741-3106

VL - 25

SP - 271

EP - 272

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

ER -

Vertical p-i-n polysilicon diode with antifuse for stackable field-programmable ROM

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Keywords

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