Vertical light-emitting diode fabrication by controlled spalling

Stephen W. Bedell, Can Bayram, Keith Fogel, Paul Lauro, Jonathan Kiser, John Ott, Yu Zhu, Devendra Sadana

Research output: Contribution to journalArticlepeer-review

Abstract

A fracture-based layer transfer technique referred to as controlled spalling was used to separate a conventional InGaN/GaN multiple quantum well light-emitting diode (LED) structure from a 50mm sapphire wafer enabling the formation of vertical spalled LEDs (SLEDs). A 25-μm-thick tensile Ni layer was electrodeposited on the surface of the wafer, followed by the application of a polyimide tape layer. By mechanically guiding the tape layer, a 3-μm-thick layer of the LED epitaxy was removed. Transmission electron microscopy imaging indicated that spalling preserved the quality of the epitaxial layers, and electroluminescence verifies the operation of the SLED.

Original languageEnglish (US)
Article number112301
JournalApplied Physics Express
Volume6
Issue number11
DOIs
StatePublished - Nov 1 2013
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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