Vertical hetero- and homo-junction tunnel field-effect transistors

Wenjuan Zhu; Shang Chun Lu; Mohamed Mohamed

Vertical hetero- and homo-junction tunnel field-effect transistors

Wenjuan Zhu (Inventor), Shang Chun Lu (Inventor), Mohamed Mohamed (Inventor)

Research output: Patent

Abstract

The present disclosure provides vertical hetero- and homo-junction tunnel FET (TFET) based on multi-layer black phosphorus (BP) and transition metal dichalcogenides.

Original language	English (US)
U.S. patent number	10236386
State	Published - Mar 19 2019

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title = "Vertical hetero- and homo-junction tunnel field-effect transistors",

abstract = "The present disclosure provides vertical hetero- and homo-junction tunnel FET (TFET) based on multi-layer black phosphorus (BP) and transition metal dichalcogenides.",

author = "Wenjuan Zhu and Lu, {Shang Chun} and Mohamed Mohamed",

year = "2019",

month = mar,

day = "19",

language = "English (US)",

type = "Patent",

note = "10236386",

}

TY - PAT

T1 - Vertical hetero- and homo-junction tunnel field-effect transistors

AU - Zhu, Wenjuan

AU - Lu, Shang Chun

AU - Mohamed, Mohamed

PY - 2019/3/19

Y1 - 2019/3/19

N2 - The present disclosure provides vertical hetero- and homo-junction tunnel FET (TFET) based on multi-layer black phosphorus (BP) and transition metal dichalcogenides.

AB - The present disclosure provides vertical hetero- and homo-junction tunnel FET (TFET) based on multi-layer black phosphorus (BP) and transition metal dichalcogenides.

M3 - Patent

M1 - 10236386

ER -

Vertical hetero- and homo-junction tunnel field-effect transistors

Abstract

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