Vertical cavity transistor laser for on-chip OICs

Milton Feng, Michael Liu, Curtis Wang, Nick Holonyak

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Transistor Laser (TL) has picosecond radiative recombination lifetime; thus, it will have modulation bandwidth higher than VCSELs. TL has demonstrated error free transmission at 22 Gb/s and vertical cavity TL can achieve ultralow power operation.

Original languageEnglish (US)
Title of host publication2015 IEEE Summer Topicals Meeting Series, SUM 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages146-147
Number of pages2
ISBN (Electronic)9781479974689
DOIs
StatePublished - Sep 9 2015
EventIEEE Summer Topicals Meeting Series, SUM 2015 - Nassau, Bahamas
Duration: Jul 13 2015Jul 15 2015

Publication series

Name2015 IEEE Summer Topicals Meeting Series, SUM 2015

Other

OtherIEEE Summer Topicals Meeting Series, SUM 2015
CountryBahamas
CityNassau
Period7/13/157/15/15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Computer Networks and Communications
  • Signal Processing

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  • Cite this

    Feng, M., Liu, M., Wang, C., & Holonyak, N. (2015). Vertical cavity transistor laser for on-chip OICs. In 2015 IEEE Summer Topicals Meeting Series, SUM 2015 (pp. 146-147). [7248238] (2015 IEEE Summer Topicals Meeting Series, SUM 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PHOSST.2015.7248238