Abstract
Transistor Laser (TL) has picosecond radiative recombination lifetime; thus, it will have modulation bandwidth higher than VCSELs. TL has demonstrated error free transmission at 22 Gb/s and vertical cavity TL can achieve ultralow power operation.
| Original language | English (US) |
|---|---|
| Title of host publication | 2015 IEEE Summer Topicals Meeting Series, SUM 2015 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 146-147 |
| Number of pages | 2 |
| ISBN (Electronic) | 9781479974689 |
| DOIs | |
| State | Published - Sep 9 2015 |
| Event | IEEE Summer Topicals Meeting Series, SUM 2015 - Nassau, Bahamas Duration: Jul 13 2015 → Jul 15 2015 |
Publication series
| Name | 2015 IEEE Summer Topicals Meeting Series, SUM 2015 |
|---|
Other
| Other | IEEE Summer Topicals Meeting Series, SUM 2015 |
|---|---|
| Country | Bahamas |
| City | Nassau |
| Period | 7/13/15 → 7/15/15 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Computer Networks and Communications
- Signal Processing
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Cite this
Feng, M., Liu, M., Wang, C., & Holonyak, N. (2015). Vertical cavity transistor laser for on-chip OICs. In 2015 IEEE Summer Topicals Meeting Series, SUM 2015 (pp. 146-147). [7248238] (2015 IEEE Summer Topicals Meeting Series, SUM 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PHOSST.2015.7248238