Vertical cavity surface emitting lasers with AlGaInAs/AlGaAs quantum wells grown by molecular beam epitaxy

P. Leinonen, T. Leinonen, J. Viheriala, M. Pessa, Y. K. Kim, E. W. Young, K. D. Choquette

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have observed, single mode lasing at 766 nm in vertical cavity surface emitting lasers with AlGaInAs/AlGaAs quantum wells grown by molecular beam epitaxy. This could play an important role in the development of cost-effective and accurate oxygen sensor.

Original languageEnglish (US)
Title of host publication2003 Conference on Lasers and Electro-Optics Europe, CLEO/EUROPE 2003
Pages131
Number of pages1
DOIs
StatePublished - 2003
Event2003 Conference on Lasers and Electro-Optics Europe, CLEO/EUROPE 2003 - Munich, Germany
Duration: Jun 22 2003Jun 27 2003

Publication series

NameConference on Lasers and Electro-Optics Europe - Technical Digest

Other

Other2003 Conference on Lasers and Electro-Optics Europe, CLEO/EUROPE 2003
Country/TerritoryGermany
CityMunich
Period6/22/036/27/03

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

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