Vertical-cavity surface-emitting-lasers with 21% efficiency by metalorganic vapor phase epitaxy

K. L. Lear, R. P. Schneider, K. D. Choquette, S. P. Kilcoyne, J. J. Figiel, J. C. Zolper

Research output: Contribution to journalConference articlepeer-review

Abstract

We have demonstrated vertical-cavity top-surface-emitting lasers by metalorganic vapor phase epitaxy that set record cw performance marks of 21% power conversion efficiency, 1.47 V threshold voltage, 23 mW output power, and 3.7 mW single-mode output power. The enhanced laser performance relies on novel mirror designs and benefits of metalorganic vapor phase epitaxy.

Original languageEnglish (US)
Pages (from-to)181-182
Number of pages2
JournalConference Digest - IEEE International Semiconductor Laser Conference
StatePublished - Dec 1 1994
Externally publishedYes
EventProceedings of the 1994 14th International Semiconductor Laser Conference - Maui, HI, USA
Duration: Sep 19 1994Sep 23 1994

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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