Vertical cavity surface emitting lasers on Si substrates

Y. Xiong, Y. Zhou, J. Zhang, Z. Zhu, Y. Lo, A. Allerman, K. D. Choquette, B. E. Hammons

Research output: Contribution to journalConference articlepeer-review

Abstract

Reported is a new GaAs/Si bonding and material integration technology that can be done at room temperature with similar bonding strength as direct wafer bonding process. Because of the low bonding temperature, the material is not under stress at room temperature. When temperature rises during device processing, the GaAs film is under compression instead of tension so the film does not crack. By using the low stress room temperature bonding technique, the authors demonstrate VCSELs with a threshold current of 1.2 mA under continuous-wave condition.

Original languageEnglish (US)
Pages (from-to)61-62
Number of pages2
JournalLEOS Summer Topical Meeting
StatePublished - Jan 1 1999
Externally publishedYes
EventProceedings of the 1999 IEEE/LEOS Summer Topical Meeting on Nanostructures and Quantum Dots - San Diego, CA, USA
Duration: Jul 26 1999Jul 27 1999

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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