Vertical cavity surface emitting lasers on Si substrates

Y. Xiong; Y. Zhou; J. Zhang; Z. Zhu; Y. Lo; A. Allerman; K. D. Choquette; B. E. Hammons

Vertical cavity surface emitting lasers on Si substrates

Y. Xiong, Y. Zhou, J. Zhang, Z. Zhu, Y. Lo, A. Allerman, K. D. Choquette, B. E. Hammons

Research output: Contribution to journal › Conference article › peer-review

Abstract

Reported is a new GaAs/Si bonding and material integration technology that can be done at room temperature with similar bonding strength as direct wafer bonding process. Because of the low bonding temperature, the material is not under stress at room temperature. When temperature rises during device processing, the GaAs film is under compression instead of tension so the film does not crack. By using the low stress room temperature bonding technique, the authors demonstrate VCSELs with a threshold current of 1.2 mA under continuous-wave condition.

Original language	English (US)
Pages (from-to)	61-62
Number of pages	2
Journal	LEOS Summer Topical Meeting
State	Published - Jan 1 1999
Externally published	Yes
Event	Proceedings of the 1999 IEEE/LEOS Summer Topical Meeting on Nanostructures and Quantum Dots - San Diego, CA, USA Duration: Jul 26 1999 → Jul 27 1999

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Cite this

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title = "Vertical cavity surface emitting lasers on Si substrates",

abstract = "Reported is a new GaAs/Si bonding and material integration technology that can be done at room temperature with similar bonding strength as direct wafer bonding process. Because of the low bonding temperature, the material is not under stress at room temperature. When temperature rises during device processing, the GaAs film is under compression instead of tension so the film does not crack. By using the low stress room temperature bonding technique, the authors demonstrate VCSELs with a threshold current of 1.2 mA under continuous-wave condition.",

author = "Y. Xiong and Y. Zhou and J. Zhang and Z. Zhu and Y. Lo and A. Allerman and Choquette, {K. D.} and Hammons, {B. E.}",

year = "1999",

month = jan,

day = "1",

language = "English (US)",

pages = "61--62",

journal = "LEOS Summer Topical Meeting",

issn = "1099-4742",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1999 IEEE/LEOS Summer Topical Meeting on Nanostructures and Quantum Dots ; Conference date: 26-07-1999 Through 27-07-1999",

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TY - JOUR

T1 - Vertical cavity surface emitting lasers on Si substrates

AU - Xiong, Y.

AU - Zhou, Y.

AU - Zhang, J.

AU - Zhu, Z.

AU - Lo, Y.

AU - Allerman, A.

AU - Choquette, K. D.

AU - Hammons, B. E.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - Reported is a new GaAs/Si bonding and material integration technology that can be done at room temperature with similar bonding strength as direct wafer bonding process. Because of the low bonding temperature, the material is not under stress at room temperature. When temperature rises during device processing, the GaAs film is under compression instead of tension so the film does not crack. By using the low stress room temperature bonding technique, the authors demonstrate VCSELs with a threshold current of 1.2 mA under continuous-wave condition.

AB - Reported is a new GaAs/Si bonding and material integration technology that can be done at room temperature with similar bonding strength as direct wafer bonding process. Because of the low bonding temperature, the material is not under stress at room temperature. When temperature rises during device processing, the GaAs film is under compression instead of tension so the film does not crack. By using the low stress room temperature bonding technique, the authors demonstrate VCSELs with a threshold current of 1.2 mA under continuous-wave condition.

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UR - http://www.scopus.com/inward/citedby.url?scp=0032599033&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032599033

SP - 61

EP - 62

JO - LEOS Summer Topical Meeting

JF - LEOS Summer Topical Meeting

SN - 1099-4742

T2 - Proceedings of the 1999 IEEE/LEOS Summer Topical Meeting on Nanostructures and Quantum Dots

Y2 - 26 July 1999 through 27 July 1999

ER -

Vertical cavity surface emitting lasers on Si substrates

Abstract

ASJC Scopus subject areas

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