TY - JOUR
T1 - Vertical-cavity surface emitting lasers
T2 - Moving from research to manufacturing
AU - Croquette, Kent D.
AU - Hou, Hong Q.
N1 - Funding Information:
Manuscript received July 5, 1997; revised July 15, 1997. This work was supported by the U.S. Department of Energy under Contract DE-AC04-94AL85000. The authors are with the Center for Compound Semiconductor Science and Technology, Sandia National Laboratories, Albuquerque, NM 87185 USA. Publisher Item Identifier S 0018-9219(97)08227-3.
PY - 1997
Y1 - 1997
N2 - After more than a decade of research, vertical-cavity surface emitting lasers (VCSEL's) are making the transition into the manufacturing arena. We review unique VCSEL properties found in their structure, growth, fabrication, and performance, which have precipitated their commercial acceptance. The short optical cavity that is formed between two distributed Bragg reflector mirrors is a distinctive VCSEL attribute. The spectral alignment between the resonance of the optical cavity formed by these mirrors and the laser gain bandwidth is shown to influence the VCSEL performance. Thus, epitaxial VCSEL growth by metalorganic vapor-phase epitaxy aided by in situ reflectance monitoring is discussed with an emphasis on uniformity and reproducibility. We also describe the fabrication techniques and VCSEL structures used to obtain transverse electrical and optical confinement, including etched air-post, ion-implanted, and selectively oxidized VCSEL's. For the latter, wet oxidation of AlGaAs to form buried-oxide apertures has enabled record laser performance, such as ultralow threshold current and high efficiency. Numerous applications for VCSEL's have been identified that leverage their manufacturing and performance advantages.
AB - After more than a decade of research, vertical-cavity surface emitting lasers (VCSEL's) are making the transition into the manufacturing arena. We review unique VCSEL properties found in their structure, growth, fabrication, and performance, which have precipitated their commercial acceptance. The short optical cavity that is formed between two distributed Bragg reflector mirrors is a distinctive VCSEL attribute. The spectral alignment between the resonance of the optical cavity formed by these mirrors and the laser gain bandwidth is shown to influence the VCSEL performance. Thus, epitaxial VCSEL growth by metalorganic vapor-phase epitaxy aided by in situ reflectance monitoring is discussed with an emphasis on uniformity and reproducibility. We also describe the fabrication techniques and VCSEL structures used to obtain transverse electrical and optical confinement, including etched air-post, ion-implanted, and selectively oxidized VCSEL's. For the latter, wet oxidation of AlGaAs to form buried-oxide apertures has enabled record laser performance, such as ultralow threshold current and high efficiency. Numerous applications for VCSEL's have been identified that leverage their manufacturing and performance advantages.
KW - Materials processing
KW - Materials science and technology
KW - Optoelectronic devices
KW - Semiconductor device fabrication
KW - Semiconductor lasers
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U2 - 10.1109/5.649649
DO - 10.1109/5.649649
M3 - Article
AN - SCOPUS:0031275596
SN - 0018-9219
VL - 85
SP - 1730
EP - 1739
JO - Proceedings of the IEEE
JF - Proceedings of the IEEE
IS - 11
ER -