We report the first buried active region verticalcavity surface-emitting laser diodes fabricated using in situ dry etching and molecular beam epitaxial regrowth. The laser emission of the etched / regrown devices persist over a greater current range and exhibit maximum output powers larger than air-post lasers. The lasers are anisotropically etched into the lower monolithic distributed Bragg reflector using an electron cyclotron resonance SiCl4 plasma etch. After transfer in ultra-high vacuum, epitaxial AlGaAs current blocking layers are regrown around the etched mesas. Polycrystalline deposition on the Si02 mask is removed by reactive ion etching to allow electrical contact and top surface emission. The etched / regrown laser characteristics demonstrate efficient current confinement and low thermal impedance. The vacuum integrated processing described here offers the prospect of further device performance enhancements and greater functionality.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering