Abstract
It is demonstrated that if the compact model of a snapback-type device is calibrated using only pulsed I-V data, it may not correctly reproduce the device response to arbitrary electrostatic discharge (ESD) waveforms. Transient I-V measurements are demonstrated to improve the completeness of the device characterization and model verification. Given an accurately calibrated ESD compact model, circuit simulations may be used to identify device-tester interactions that have been reported to cause unexpected damage during ESD testing. The interaction between a snapback device and an ESD tester can be understood in the context of a relaxation oscillator.
| Original language | English (US) |
|---|---|
| Article number | 6504488 |
| Pages (from-to) | 371-378 |
| Number of pages | 8 |
| Journal | IEEE Transactions on Device and Materials Reliability |
| Volume | 13 |
| Issue number | 2 |
| DOIs | |
| State | Published - Jul 1 2013 |
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Keywords
- Circuit simulation
- electrostatic discharge (ESD)
- metal-oxide-semiconductor (MOS) model
- reliability
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Safety, Risk, Reliability and Quality
- Electrical and Electronic Engineering
Cite this
Verification of snapback model by transient I-V measurement for circuit simulation of ESD response. / Meng, Kuo Hsuan; Rosenbaum, Elyse.
In: IEEE Transactions on Device and Materials Reliability, Vol. 13, No. 2, 6504488, 01.07.2013, p. 371-378.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Verification of snapback model by transient I-V measurement for circuit simulation of ESD response
AU - Meng, Kuo Hsuan
AU - Rosenbaum, Elyse
PY - 2013/7/1
Y1 - 2013/7/1
N2 - It is demonstrated that if the compact model of a snapback-type device is calibrated using only pulsed I-V data, it may not correctly reproduce the device response to arbitrary electrostatic discharge (ESD) waveforms. Transient I-V measurements are demonstrated to improve the completeness of the device characterization and model verification. Given an accurately calibrated ESD compact model, circuit simulations may be used to identify device-tester interactions that have been reported to cause unexpected damage during ESD testing. The interaction between a snapback device and an ESD tester can be understood in the context of a relaxation oscillator.
AB - It is demonstrated that if the compact model of a snapback-type device is calibrated using only pulsed I-V data, it may not correctly reproduce the device response to arbitrary electrostatic discharge (ESD) waveforms. Transient I-V measurements are demonstrated to improve the completeness of the device characterization and model verification. Given an accurately calibrated ESD compact model, circuit simulations may be used to identify device-tester interactions that have been reported to cause unexpected damage during ESD testing. The interaction between a snapback device and an ESD tester can be understood in the context of a relaxation oscillator.
KW - Circuit simulation
KW - electrostatic discharge (ESD)
KW - metal-oxide-semiconductor (MOS) model
KW - reliability
UR - http://www.scopus.com/inward/record.url?scp=84879354861&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84879354861&partnerID=8YFLogxK
U2 - 10.1109/TDMR.2013.2258672
DO - 10.1109/TDMR.2013.2258672
M3 - Article
AN - SCOPUS:84879354861
VL - 13
SP - 371
EP - 378
JO - IEEE Transactions on Device and Materials Reliability
JF - IEEE Transactions on Device and Materials Reliability
SN - 1530-4388
IS - 2
M1 - 6504488
ER -