Verification of snapback model by transient I-V measurement for circuit simulation of ESD response

Kuo Hsuan Meng, Elyse Rosenbaum

Research output: Contribution to journalArticle

Abstract

It is demonstrated that if the compact model of a snapback-type device is calibrated using only pulsed I-V data, it may not correctly reproduce the device response to arbitrary electrostatic discharge (ESD) waveforms. Transient I-V measurements are demonstrated to improve the completeness of the device characterization and model verification. Given an accurately calibrated ESD compact model, circuit simulations may be used to identify device-tester interactions that have been reported to cause unexpected damage during ESD testing. The interaction between a snapback device and an ESD tester can be understood in the context of a relaxation oscillator.

Original languageEnglish (US)
Article number6504488
Pages (from-to)371-378
Number of pages8
JournalIEEE Transactions on Device and Materials Reliability
Volume13
Issue number2
DOIs
StatePublished - Jul 1 2013

Keywords

  • Circuit simulation
  • electrostatic discharge (ESD)
  • metal-oxide-semiconductor (MOS) model
  • reliability

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

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