Abstract
It is demonstrated that if the compact model of a snapback-type device is calibrated using only pulsed I-V data, it may not correctly reproduce the device response to arbitrary electrostatic discharge (ESD) waveforms. Transient I-V measurements are demonstrated to improve the completeness of the device characterization and model verification. Given an accurately calibrated ESD compact model, circuit simulations may be used to identify device-tester interactions that have been reported to cause unexpected damage during ESD testing. The interaction between a snapback device and an ESD tester can be understood in the context of a relaxation oscillator.
Original language | English (US) |
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Article number | 6504488 |
Pages (from-to) | 371-378 |
Number of pages | 8 |
Journal | IEEE Transactions on Device and Materials Reliability |
Volume | 13 |
Issue number | 2 |
DOIs | |
State | Published - 2013 |
Keywords
- Circuit simulation
- electrostatic discharge (ESD)
- metal-oxide-semiconductor (MOS) model
- reliability
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Safety, Risk, Reliability and Quality
- Electrical and Electronic Engineering