Verification of snapback model by transient I-V measurement for circuit simulation of ESD response

Kuo Hsuan Meng; Elyse Rosenbaum

doi:10.1109/TDMR.2013.2258672

Verification of snapback model by transient I-V measurement for circuit simulation of ESD response

Research output: Contribution to journal › Article

Abstract

It is demonstrated that if the compact model of a snapback-type device is calibrated using only pulsed I-V data, it may not correctly reproduce the device response to arbitrary electrostatic discharge (ESD) waveforms. Transient I-V measurements are demonstrated to improve the completeness of the device characterization and model verification. Given an accurately calibrated ESD compact model, circuit simulations may be used to identify device-tester interactions that have been reported to cause unexpected damage during ESD testing. The interaction between a snapback device and an ESD tester can be understood in the context of a relaxation oscillator.

Original language	English (US)
Article number	6504488
Pages (from-to)	371-378
Number of pages	8
Journal	IEEE Transactions on Device and Materials Reliability
Volume	13
Issue number	2
DOIs	https://doi.org/10.1109/TDMR.2013.2258672
State	Published - Jul 1 2013

Keywords

Circuit simulation
electrostatic discharge (ESD)
metal-oxide-semiconductor (MOS) model
reliability

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Safety, Risk, Reliability and Quality
Electrical and Electronic Engineering

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Meng, K. H., & Rosenbaum, E. (2013). Verification of snapback model by transient I-V measurement for circuit simulation of ESD response. IEEE Transactions on Device and Materials Reliability, 13(2), 371-378. [6504488]. https://doi.org/10.1109/TDMR.2013.2258672

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