Velocity saturation current-mode CMOS imaging sensor

Raphael Njuguna, Viktor Gruev

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A current-mode CMOS imaging sensor is presented in this paper. The read-out transistor in the photo pixel operates in velocity saturation regime and allows for high linearity between integrated photo charges and output drain current. The column parallel read-out circuitry implements a novel current conveyor with a feedback mechanism which improves matching of the output currents across the imaging array. Correlated double sampling (CDS) is performed on-chip in order to improve noise characteristics of the imager. A prototype of the proposed imaging sensor was fabricated in 0.18μm triple well CMOS process. The sensor operation and measurements are presented.

Original languageEnglish (US)
Title of host publication2013 IEEE International Symposium on Circuits and Systems, ISCAS 2013
Pages2630-2633
Number of pages4
DOIs
StatePublished - Sep 9 2013
Externally publishedYes
Event2013 IEEE International Symposium on Circuits and Systems, ISCAS 2013 - Beijing, China
Duration: May 19 2013May 23 2013

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)0271-4310

Other

Other2013 IEEE International Symposium on Circuits and Systems, ISCAS 2013
CountryChina
CityBeijing
Period5/19/135/23/13

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Njuguna, R., & Gruev, V. (2013). Velocity saturation current-mode CMOS imaging sensor. In 2013 IEEE International Symposium on Circuits and Systems, ISCAS 2013 (pp. 2630-2633). [6572418] (Proceedings - IEEE International Symposium on Circuits and Systems). https://doi.org/10.1109/ISCAS.2013.6572418