VCSEL's bonded directly to foundry fabricated GaAs smart pixel arrays

Rui Pu; E. M. Hayes; R. Jurrat; C. W. Wilmsen; K. D. Choquette; H. Q. Hou; K. M. Geib

doi:10.1109/68.643289

VCSEL's bonded directly to foundry fabricated GaAs smart pixel arrays

Rui Pu, E. M. Hayes, R. Jurrat, C. W. Wilmsen, K. D. Choquette, H. Q. Hou, K. M. Geib

Research output: Contribution to journal › Article › peer-review

Abstract

This letter reports the flip-chip bonding of an 8 × 8 array of free standing VCSEL's to a foundry fabricated GaAs metal-semiconductor field-effect transistor (MESFET) smart pixel array. The VCSEL's have oxide defined apertures and are co-planar bonded directly to smart pixels which perform the selection function of a data filter. The V_th and series resistance of the VCSEL's were on average approximately 2.1 V and 250 Ω, respectively, which indicates that good electrical contact was obtainable with this process. The I_th ranged between 2-4 mA, with a corresponding output power of between 400 _μW and >1.0 mW depending on aperture size.

Original language	English (US)
Pages (from-to)	1622-1624
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	9
Issue number	12
DOIs	https://doi.org/10.1109/68.643289
State	Published - Dec 1997
Externally published	Yes

Keywords

Hybrid integration
Smart pixel arrays
VCSEL's

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Online availability

10.1109/68.643289

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title = "VCSEL's bonded directly to foundry fabricated GaAs smart pixel arrays",

abstract = "This letter reports the flip-chip bonding of an 8 × 8 array of free standing VCSEL's to a foundry fabricated GaAs metal-semiconductor field-effect transistor (MESFET) smart pixel array. The VCSEL's have oxide defined apertures and are co-planar bonded directly to smart pixels which perform the selection function of a data filter. The Vth and series resistance of the VCSEL's were on average approximately 2.1 V and 250 Ω, respectively, which indicates that good electrical contact was obtainable with this process. The Ith ranged between 2-4 mA, with a corresponding output power of between 400 μW and >1.0 mW depending on aperture size.",

keywords = "Hybrid integration, Smart pixel arrays, VCSEL's",

author = "Rui Pu and Hayes, {E. M.} and R. Jurrat and Wilmsen, {C. W.} and Choquette, {K. D.} and Hou, {H. Q.} and Geib, {K. M.}",

note = "Funding Information: Manuscript received July 17, 1997; revised August 19, 1997. This work was supported in part by the National Science Foundation under Grant 9408371 and in part by the NSF/ERC under Grant 9485502. R. Pu, E. M. Hayes, R. Jurrat, and C. W. Wilmsen are with the Department of Electrical Engineering, Colorado State University, Fort Collins, CO 80523 USA. K. D. Choquette, H. Q. Hou, and K. M. Geib are with the Sandia National Laboratories, Albuquerque, NM 87185 USA. Publisher Item Identifier S 1041-1135(97)08496-6.",

year = "1997",

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doi = "10.1109/68.643289",

language = "English (US)",

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journal = "IEEE Photonics Technology Letters",

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TY - JOUR

T1 - VCSEL's bonded directly to foundry fabricated GaAs smart pixel arrays

AU - Pu, Rui

AU - Hayes, E. M.

AU - Jurrat, R.

AU - Wilmsen, C. W.

AU - Choquette, K. D.

AU - Hou, H. Q.

AU - Geib, K. M.

N1 - Funding Information: Manuscript received July 17, 1997; revised August 19, 1997. This work was supported in part by the National Science Foundation under Grant 9408371 and in part by the NSF/ERC under Grant 9485502. R. Pu, E. M. Hayes, R. Jurrat, and C. W. Wilmsen are with the Department of Electrical Engineering, Colorado State University, Fort Collins, CO 80523 USA. K. D. Choquette, H. Q. Hou, and K. M. Geib are with the Sandia National Laboratories, Albuquerque, NM 87185 USA. Publisher Item Identifier S 1041-1135(97)08496-6.

PY - 1997/12

Y1 - 1997/12

N2 - This letter reports the flip-chip bonding of an 8 × 8 array of free standing VCSEL's to a foundry fabricated GaAs metal-semiconductor field-effect transistor (MESFET) smart pixel array. The VCSEL's have oxide defined apertures and are co-planar bonded directly to smart pixels which perform the selection function of a data filter. The Vth and series resistance of the VCSEL's were on average approximately 2.1 V and 250 Ω, respectively, which indicates that good electrical contact was obtainable with this process. The Ith ranged between 2-4 mA, with a corresponding output power of between 400 μW and >1.0 mW depending on aperture size.

AB - This letter reports the flip-chip bonding of an 8 × 8 array of free standing VCSEL's to a foundry fabricated GaAs metal-semiconductor field-effect transistor (MESFET) smart pixel array. The VCSEL's have oxide defined apertures and are co-planar bonded directly to smart pixels which perform the selection function of a data filter. The Vth and series resistance of the VCSEL's were on average approximately 2.1 V and 250 Ω, respectively, which indicates that good electrical contact was obtainable with this process. The Ith ranged between 2-4 mA, with a corresponding output power of between 400 μW and >1.0 mW depending on aperture size.

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KW - Smart pixel arrays

KW - VCSEL's

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VCSEL's bonded directly to foundry fabricated GaAs smart pixel arrays

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