The passivation of the Si(100) surface with H and D is studied with scanning tunneling microscopy (STM). During the passivation process, the clean Si(100) surface is exposed to a gas phase mixture of atomic H and D. By directly observing the dramatic isotopic difference in STM-induced electron stimulated desorption rates, the relative surface concentrations of H and D is discerned with atomic resolution. The ratio of D to H on the Si(100) surface is found to vary by more than an order of magnitude following monolayer passivation at temperatures between 300 and 700 K. A statistical thermodynamics model attributes this behavior to the difference in the vibrational frequencies of H and D on silicon surfaces.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Jan 14 2002|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)