TY - JOUR
T1 - Variable and Orbital-Dependent Spin-Orbit Field Orientations in an InSb Double Quantum Dot Characterized via Dispersive Gate Sensing
AU - Han, Lin
AU - Chan, Michael
AU - De Jong, Damaz
AU - Prosko, Christian
AU - Badawy, Ghada
AU - Gazibegovic, Sasa
AU - Bakkers, Erik P.A.M.
AU - Kouwenhoven, Leo P.
AU - Malinowski, Filip K.
AU - Pfaff, Wolfgang
N1 - Funding Information:
We appreciate J. Koski for suggestions regarding to the experiment and the paper. We thank K. Li for assisting nanowire deposition, F. Borsoi, N. van Loo, and J. Wang for useful advice on fabrication, A. Palyi and Z. Scherübl for fruitful discussions on the measurement results, also M. Hornibrook and D.J. Reilly for providing the frequency multiplexing chips, O.W.B. Benningshof, R.N. Schouten, and J.D. Mensingh for valuable technical assistance. This work has been supported by the Netherlands Organization for Scientific Research (NWO) and Microsoft Quantum Lab Delft. F.K.M. acknowledges support from NWO under Veni Grant (VI.Veni.202.034).
Publisher Copyright:
© 2023 American Physical Society.
PY - 2023/1
Y1 - 2023/1
N2 - Utilizing dispersive gate sensing (DGS), we investigate the spin-orbit field (BSO) orientation in a many-electron double quantum dot (DQD) defined in an InSb nanowire. While characterizing the interdot tunnel couplings, we find the measured dispersive signal depends on the electron-charge occupancy, as well as on the amplitude and orientation of the external magnetic field. The dispersive signal is mostly insensitive to the external field orientation when a DQD is occupied by a total odd number of electrons. For a DQD occupied by a total even number of electrons, the dispersive signal is reduced when the finite external magnetic field aligns with the effective BSO orientation. This fact enables the identification of BSO orientations for different DQD electron occupancies. The BSO orientation varies drastically between charge transitions, and is generally neither perpendicular to the nanowire nor in the chip plane. Moreover, BSO is similar for pairs of transitions involving the same valence orbital, and varies between such pairs. Our work demonstrates the practicality of DGS in characterizing spin-orbit interactions in quantum dot systems, without requiring any current flow through the device.
AB - Utilizing dispersive gate sensing (DGS), we investigate the spin-orbit field (BSO) orientation in a many-electron double quantum dot (DQD) defined in an InSb nanowire. While characterizing the interdot tunnel couplings, we find the measured dispersive signal depends on the electron-charge occupancy, as well as on the amplitude and orientation of the external magnetic field. The dispersive signal is mostly insensitive to the external field orientation when a DQD is occupied by a total odd number of electrons. For a DQD occupied by a total even number of electrons, the dispersive signal is reduced when the finite external magnetic field aligns with the effective BSO orientation. This fact enables the identification of BSO orientations for different DQD electron occupancies. The BSO orientation varies drastically between charge transitions, and is generally neither perpendicular to the nanowire nor in the chip plane. Moreover, BSO is similar for pairs of transitions involving the same valence orbital, and varies between such pairs. Our work demonstrates the practicality of DGS in characterizing spin-orbit interactions in quantum dot systems, without requiring any current flow through the device.
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U2 - 10.1103/PhysRevApplied.19.014063
DO - 10.1103/PhysRevApplied.19.014063
M3 - Article
AN - SCOPUS:85147543630
SN - 2331-7019
VL - 19
JO - Physical Review Applied
JF - Physical Review Applied
IS - 1
M1 - 014063
ER -