Variability of graphene mobility and contacts: Surface effects, doping and strain

Enrique A. Carrion; Josh D. Wood; Ashkan Behman; Maryann Tung; Joseph W. Lyding; Eric Pop

doi:10.1109/DRC.2014.6872366

Variability of graphene mobility and contacts: Surface effects, doping and strain

Enrique A. Carrion, Josh D. Wood, Ashkan Behman, Maryann Tung, Joseph W. Lyding, Eric Pop

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

It is well known that devices based on chemical vapor deposited (CVD) graphene exhibit substantial variability of their electrical properties [1]. However, the sources of such variability and how they might be controlled remain poorly understood. Here, we methodically investigate variability of CVD graphene field-effect transistors (GFETs) transferred with three polymer scaffolds: PMMA, polycarbonate (PC), and a PC/PMMA bilayer (PC in contact with graphene). We find that the polymer/graphene mechanical interaction during transfer and the presence of surface residues induce changes in graphene roughness (up to ∼0.2 nm), doping concentrations (up to ∼2. 5×10¹² cm^-2) and strain levels (up to ∼0.2%) between the polymer scaffolds used. We uncover that a combination of smaller strain and doping from the PC/PMMA scaffolds ultimately yields the lowest variability of contact resistance (R_c) and mobility (μ).

Original language	English (US)
Title of host publication	72nd Device Research Conference, DRC 2014 - Conference Digest
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	199-200
Number of pages	2
ISBN (Print)	9781479954056
DOIs	https://doi.org/10.1109/DRC.2014.6872366
State	Published - Jan 1 2014
Event	72nd Device Research Conference, DRC 2014 - Santa Barbara, CA, United States Duration: Jun 22 2014 → Jun 25 2014

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	72nd Device Research Conference, DRC 2014
Country	United States
City	Santa Barbara, CA
Period	6/22/14 → 6/25/14

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2014.6872366

Fingerprint Dive into the research topics of 'Variability of graphene mobility and contacts: Surface effects, doping and strain'. Together they form a unique fingerprint.

Cite this

Carrion, E. A., Wood, J. D., Behman, A., Tung, M., Lyding, J. W., & Pop, E. (2014). Variability of graphene mobility and contacts: Surface effects, doping and strain. In 72nd Device Research Conference, DRC 2014 - Conference Digest (pp. 199-200). [6872366] (Device Research Conference - Conference Digest, DRC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2014.6872366

Variability of graphene mobility and contacts : Surface effects, doping and strain. / Carrion, Enrique A.; Wood, Josh D.; Behman, Ashkan; Tung, Maryann; Lyding, Joseph W.; Pop, Eric.

72nd Device Research Conference, DRC 2014 - Conference Digest. Institute of Electrical and Electronics Engineers Inc., 2014. p. 199-200 6872366 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Carrion, EA, Wood, JD, Behman, A, Tung, M, Lyding, JW & Pop, E 2014, Variability of graphene mobility and contacts: Surface effects, doping and strain. in 72nd Device Research Conference, DRC 2014 - Conference Digest., 6872366, Device Research Conference - Conference Digest, DRC, Institute of Electrical and Electronics Engineers Inc., pp. 199-200, 72nd Device Research Conference, DRC 2014, Santa Barbara, CA, United States, 6/22/14. https://doi.org/10.1109/DRC.2014.6872366

Carrion EA, Wood JD, Behman A, Tung M, Lyding JW, Pop E. Variability of graphene mobility and contacts: Surface effects, doping and strain. In 72nd Device Research Conference, DRC 2014 - Conference Digest. Institute of Electrical and Electronics Engineers Inc. 2014. p. 199-200. 6872366. (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2014.6872366

Carrion, Enrique A. ; Wood, Josh D. ; Behman, Ashkan ; Tung, Maryann ; Lyding, Joseph W. ; Pop, Eric. / Variability of graphene mobility and contacts : Surface effects, doping and strain. 72nd Device Research Conference, DRC 2014 - Conference Digest. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 199-200 (Device Research Conference - Conference Digest, DRC).

@inproceedings{beee6d4651f54a1b88edacc7d22043ae,

title = "Variability of graphene mobility and contacts: Surface effects, doping and strain",

abstract = "It is well known that devices based on chemical vapor deposited (CVD) graphene exhibit substantial variability of their electrical properties [1]. However, the sources of such variability and how they might be controlled remain poorly understood. Here, we methodically investigate variability of CVD graphene field-effect transistors (GFETs) transferred with three polymer scaffolds: PMMA, polycarbonate (PC), and a PC/PMMA bilayer (PC in contact with graphene). We find that the polymer/graphene mechanical interaction during transfer and the presence of surface residues induce changes in graphene roughness (up to ∼0.2 nm), doping concentrations (up to ∼2. 5×1012 cm-2) and strain levels (up to ∼0.2%) between the polymer scaffolds used. We uncover that a combination of smaller strain and doping from the PC/PMMA scaffolds ultimately yields the lowest variability of contact resistance (Rc) and mobility (μ).",

author = "Carrion, {Enrique A.} and Wood, {Josh D.} and Ashkan Behman and Maryann Tung and Lyding, {Joseph W.} and Eric Pop",

year = "2014",

month = jan,

day = "1",

doi = "10.1109/DRC.2014.6872366",

language = "English (US)",

isbn = "9781479954056",

series = "Device Research Conference - Conference Digest, DRC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "199--200",

booktitle = "72nd Device Research Conference, DRC 2014 - Conference Digest",

address = "United States",

note = "72nd Device Research Conference, DRC 2014 ; Conference date: 22-06-2014 Through 25-06-2014",

}

TY - GEN

T1 - Variability of graphene mobility and contacts

T2 - 72nd Device Research Conference, DRC 2014

AU - Carrion, Enrique A.

AU - Wood, Josh D.

AU - Behman, Ashkan

AU - Tung, Maryann

AU - Lyding, Joseph W.

AU - Pop, Eric

PY - 2014/1/1

Y1 - 2014/1/1

N2 - It is well known that devices based on chemical vapor deposited (CVD) graphene exhibit substantial variability of their electrical properties [1]. However, the sources of such variability and how they might be controlled remain poorly understood. Here, we methodically investigate variability of CVD graphene field-effect transistors (GFETs) transferred with three polymer scaffolds: PMMA, polycarbonate (PC), and a PC/PMMA bilayer (PC in contact with graphene). We find that the polymer/graphene mechanical interaction during transfer and the presence of surface residues induce changes in graphene roughness (up to ∼0.2 nm), doping concentrations (up to ∼2. 5×1012 cm-2) and strain levels (up to ∼0.2%) between the polymer scaffolds used. We uncover that a combination of smaller strain and doping from the PC/PMMA scaffolds ultimately yields the lowest variability of contact resistance (Rc) and mobility (μ).

AB - It is well known that devices based on chemical vapor deposited (CVD) graphene exhibit substantial variability of their electrical properties [1]. However, the sources of such variability and how they might be controlled remain poorly understood. Here, we methodically investigate variability of CVD graphene field-effect transistors (GFETs) transferred with three polymer scaffolds: PMMA, polycarbonate (PC), and a PC/PMMA bilayer (PC in contact with graphene). We find that the polymer/graphene mechanical interaction during transfer and the presence of surface residues induce changes in graphene roughness (up to ∼0.2 nm), doping concentrations (up to ∼2. 5×1012 cm-2) and strain levels (up to ∼0.2%) between the polymer scaffolds used. We uncover that a combination of smaller strain and doping from the PC/PMMA scaffolds ultimately yields the lowest variability of contact resistance (Rc) and mobility (μ).

UR - http://www.scopus.com/inward/record.url?scp=84906535987&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84906535987&partnerID=8YFLogxK

U2 - 10.1109/DRC.2014.6872366

DO - 10.1109/DRC.2014.6872366

M3 - Conference contribution

AN - SCOPUS:84906535987

SN - 9781479954056

T3 - Device Research Conference - Conference Digest, DRC

SP - 199

EP - 200

BT - 72nd Device Research Conference, DRC 2014 - Conference Digest

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 22 June 2014 through 25 June 2014

ER -

Variability of graphene mobility and contacts: Surface effects, doping and strain

Abstract

Publication series

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this