Abstract
It is well known that devices based on chemical vapor deposited (CVD) graphene exhibit substantial variability of their electrical properties [1]. However, the sources of such variability and how they might be controlled remain poorly understood. Here, we methodically investigate variability of CVD graphene field-effect transistors (GFETs) transferred with three polymer scaffolds: PMMA, polycarbonate (PC), and a PC/PMMA bilayer (PC in contact with graphene). We find that the polymer/graphene mechanical interaction during transfer and the presence of surface residues induce changes in graphene roughness (up to ∼0.2 nm), doping concentrations (up to ∼2. 5×1012 cm-2) and strain levels (up to ∼0.2%) between the polymer scaffolds used. We uncover that a combination of smaller strain and doping from the PC/PMMA scaffolds ultimately yields the lowest variability of contact resistance (Rc) and mobility (μ).
| Original language | English (US) |
|---|---|
| Title of host publication | 72nd Device Research Conference, DRC 2014 - Conference Digest |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 199-200 |
| Number of pages | 2 |
| ISBN (Print) | 9781479954056 |
| DOIs | |
| State | Published - Jan 1 2014 |
| Event | 72nd Device Research Conference, DRC 2014 - Santa Barbara, CA, United States Duration: Jun 22 2014 → Jun 25 2014 |
Publication series
| Name | Device Research Conference - Conference Digest, DRC |
|---|---|
| ISSN (Print) | 1548-3770 |
Other
| Other | 72nd Device Research Conference, DRC 2014 |
|---|---|
| Country | United States |
| City | Santa Barbara, CA |
| Period | 6/22/14 → 6/25/14 |
Fingerprint
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Variability of graphene mobility and contacts : Surface effects, doping and strain. / Carrion, Enrique A.; Wood, Josh D.; Behman, Ashkan; Tung, Maryann; Lyding, Joseph W.; Pop, Eric.
72nd Device Research Conference, DRC 2014 - Conference Digest. Institute of Electrical and Electronics Engineers Inc., 2014. p. 199-200 6872366 (Device Research Conference - Conference Digest, DRC).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Variability of graphene mobility and contacts
T2 - Surface effects, doping and strain
AU - Carrion, Enrique A.
AU - Wood, Josh D.
AU - Behman, Ashkan
AU - Tung, Maryann
AU - Lyding, Joseph W.
AU - Pop, Eric
PY - 2014/1/1
Y1 - 2014/1/1
N2 - It is well known that devices based on chemical vapor deposited (CVD) graphene exhibit substantial variability of their electrical properties [1]. However, the sources of such variability and how they might be controlled remain poorly understood. Here, we methodically investigate variability of CVD graphene field-effect transistors (GFETs) transferred with three polymer scaffolds: PMMA, polycarbonate (PC), and a PC/PMMA bilayer (PC in contact with graphene). We find that the polymer/graphene mechanical interaction during transfer and the presence of surface residues induce changes in graphene roughness (up to ∼0.2 nm), doping concentrations (up to ∼2. 5×1012 cm-2) and strain levels (up to ∼0.2%) between the polymer scaffolds used. We uncover that a combination of smaller strain and doping from the PC/PMMA scaffolds ultimately yields the lowest variability of contact resistance (Rc) and mobility (μ).
AB - It is well known that devices based on chemical vapor deposited (CVD) graphene exhibit substantial variability of their electrical properties [1]. However, the sources of such variability and how they might be controlled remain poorly understood. Here, we methodically investigate variability of CVD graphene field-effect transistors (GFETs) transferred with three polymer scaffolds: PMMA, polycarbonate (PC), and a PC/PMMA bilayer (PC in contact with graphene). We find that the polymer/graphene mechanical interaction during transfer and the presence of surface residues induce changes in graphene roughness (up to ∼0.2 nm), doping concentrations (up to ∼2. 5×1012 cm-2) and strain levels (up to ∼0.2%) between the polymer scaffolds used. We uncover that a combination of smaller strain and doping from the PC/PMMA scaffolds ultimately yields the lowest variability of contact resistance (Rc) and mobility (μ).
UR - http://www.scopus.com/inward/record.url?scp=84906535987&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84906535987&partnerID=8YFLogxK
U2 - 10.1109/DRC.2014.6872366
DO - 10.1109/DRC.2014.6872366
M3 - Conference contribution
AN - SCOPUS:84906535987
SN - 9781479954056
T3 - Device Research Conference - Conference Digest, DRC
SP - 199
EP - 200
BT - 72nd Device Research Conference, DRC 2014 - Conference Digest
PB - Institute of Electrical and Electronics Engineers Inc.
ER -