Variability of graphene mobility and contacts: Surface effects, doping and strain

Enrique A. Carrion; Josh D. Wood; Ashkan Behman; Maryann Tung; Joseph W. Lyding; Eric Pop

doi:10.1109/DRC.2014.6872366

Variability of graphene mobility and contacts: Surface effects, doping and strain

Enrique A. Carrion, Josh D. Wood, Ashkan Behman, Maryann Tung, Joseph W. Lyding, Eric Pop

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

It is well known that devices based on chemical vapor deposited (CVD) graphene exhibit substantial variability of their electrical properties [1]. However, the sources of such variability and how they might be controlled remain poorly understood. Here, we methodically investigate variability of CVD graphene field-effect transistors (GFETs) transferred with three polymer scaffolds: PMMA, polycarbonate (PC), and a PC/PMMA bilayer (PC in contact with graphene). We find that the polymer/graphene mechanical interaction during transfer and the presence of surface residues induce changes in graphene roughness (up to ∼0.2 nm), doping concentrations (up to ∼2. 5×10¹² cm^-2) and strain levels (up to ∼0.2%) between the polymer scaffolds used. We uncover that a combination of smaller strain and doping from the PC/PMMA scaffolds ultimately yields the lowest variability of contact resistance (R_c) and mobility (μ).

Original language	English (US)
Title of host publication	72nd Device Research Conference, DRC 2014 - Conference Digest
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	199-200
Number of pages	2
ISBN (Print)	9781479954056
DOIs	https://doi.org/10.1109/DRC.2014.6872366
State	Published - 2014
Event	72nd Device Research Conference, DRC 2014 - Santa Barbara, CA, United States Duration: Jun 22 2014 → Jun 25 2014

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	72nd Device Research Conference, DRC 2014
Country/Territory	United States
City	Santa Barbara, CA
Period	6/22/14 → 6/25/14

ASJC Scopus subject areas

Electrical and Electronic Engineering

Online availability

10.1109/DRC.2014.6872366

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Carrion, E. A., Wood, J. D., Behman, A., Tung, M., Lyding, J. W., & Pop, E. (2014). Variability of graphene mobility and contacts: Surface effects, doping and strain. In 72nd Device Research Conference, DRC 2014 - Conference Digest (pp. 199-200). [6872366] (Device Research Conference - Conference Digest, DRC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2014.6872366

Variability of graphene mobility and contacts : Surface effects, doping and strain. / Carrion, Enrique A.; Wood, Josh D.; Behman, Ashkan et al.

72nd Device Research Conference, DRC 2014 - Conference Digest. Institute of Electrical and Electronics Engineers Inc., 2014. p. 199-200 6872366 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Carrion, EA, Wood, JD, Behman, A, Tung, M, Lyding, JW & Pop, E 2014, Variability of graphene mobility and contacts: Surface effects, doping and strain. in 72nd Device Research Conference, DRC 2014 - Conference Digest., 6872366, Device Research Conference - Conference Digest, DRC, Institute of Electrical and Electronics Engineers Inc., pp. 199-200, 72nd Device Research Conference, DRC 2014, Santa Barbara, CA, United States, 6/22/14. https://doi.org/10.1109/DRC.2014.6872366

Carrion EA, Wood JD, Behman A, Tung M, Lyding JW, Pop E. Variability of graphene mobility and contacts: Surface effects, doping and strain. In 72nd Device Research Conference, DRC 2014 - Conference Digest. Institute of Electrical and Electronics Engineers Inc. 2014. p. 199-200. 6872366. (Device Research Conference - Conference Digest, DRC). doi: 10.1109/DRC.2014.6872366

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AB - It is well known that devices based on chemical vapor deposited (CVD) graphene exhibit substantial variability of their electrical properties [1]. However, the sources of such variability and how they might be controlled remain poorly understood. Here, we methodically investigate variability of CVD graphene field-effect transistors (GFETs) transferred with three polymer scaffolds: PMMA, polycarbonate (PC), and a PC/PMMA bilayer (PC in contact with graphene). We find that the polymer/graphene mechanical interaction during transfer and the presence of surface residues induce changes in graphene roughness (up to ∼0.2 nm), doping concentrations (up to ∼2. 5×1012 cm-2) and strain levels (up to ∼0.2%) between the polymer scaffolds used. We uncover that a combination of smaller strain and doping from the PC/PMMA scaffolds ultimately yields the lowest variability of contact resistance (Rc) and mobility (μ).

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Variability of graphene mobility and contacts: Surface effects, doping and strain

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