Variability of graphene mobility and contacts: Surface effects, doping and strain

Enrique A. Carrion, Josh D. Wood, Ashkan Behman, Maryann Tung, Joseph W. Lyding, Eric Pop

Research output: Chapter in Book/Report/Conference proceedingConference contribution


It is well known that devices based on chemical vapor deposited (CVD) graphene exhibit substantial variability of their electrical properties [1]. However, the sources of such variability and how they might be controlled remain poorly understood. Here, we methodically investigate variability of CVD graphene field-effect transistors (GFETs) transferred with three polymer scaffolds: PMMA, polycarbonate (PC), and a PC/PMMA bilayer (PC in contact with graphene). We find that the polymer/graphene mechanical interaction during transfer and the presence of surface residues induce changes in graphene roughness (up to ∼0.2 nm), doping concentrations (up to ∼2. 5×1012 cm-2) and strain levels (up to ∼0.2%) between the polymer scaffolds used. We uncover that a combination of smaller strain and doping from the PC/PMMA scaffolds ultimately yields the lowest variability of contact resistance (Rc) and mobility (μ).

Original languageEnglish (US)
Title of host publication72nd Device Research Conference, DRC 2014 - Conference Digest
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages2
ISBN (Print)9781479954056
StatePublished - 2014
Event72nd Device Research Conference, DRC 2014 - Santa Barbara, CA, United States
Duration: Jun 22 2014Jun 25 2014

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Other72nd Device Research Conference, DRC 2014
Country/TerritoryUnited States
CitySanta Barbara, CA

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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