Abstract
The vapor-liquid-solid (VLS) growth technique has advanced significantly over the past several decades. This technique has progressed from an interesting method for whisker growth to a viable approach for semiconductor nanowire fabrication for applications in nanoscale electronics, optoelectronics, sensing, and energy conversion. This chapter reviews fundamental aspects of VLS growth with an emphasis on synthesis within a chemical vapor deposition environment. The first half of the chapter is focused on Si nanowire growth, and reviews diameter-dependent growth rate and orientation effects, metal catalysts, intentional doping, and the growth of Si1-xGex nanowires and axial heterostructures. The second half is devoted to a review of III-V nanowire growth with an emphasis on GaAs and InAs nanowires. The growth of vertical and planar III-V nanowires is initially discussed, followed by doping and the synthesis of nanowire axial and radial (core-shell) heterostructures.
Original language | English (US) |
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Title of host publication | Handbook of Crystal Growth |
Subtitle of host publication | Thin Films and Epitaxy: Second Edition |
Publisher | Elsevier Inc. |
Pages | 399-439 |
Number of pages | 41 |
Volume | 3 |
ISBN (Electronic) | 9780444633057 |
ISBN (Print) | 9780444633040 |
DOIs | |
State | Published - 2015 |
Keywords
- Core-shell nanowires
- Doping of nanowires
- III-V Nanowires
- Nanowire axial heterostructures
- Nanowire growth direction
- Si nanowires
- SiGe nanowires
- Vapor-liquid-solid growth
ASJC Scopus subject areas
- General Physics and Astronomy