Vapor-Liquid-Solid Growth of Semiconductor Nanowires

Joan M. Redwing, Xin Miao, Xiuling Li

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

The vapor-liquid-solid (VLS) growth technique has advanced significantly over the past several decades. This technique has progressed from an interesting method for whisker growth to a viable approach for semiconductor nanowire fabrication for applications in nanoscale electronics, optoelectronics, sensing, and energy conversion. This chapter reviews fundamental aspects of VLS growth with an emphasis on synthesis within a chemical vapor deposition environment. The first half of the chapter is focused on Si nanowire growth, and reviews diameter-dependent growth rate and orientation effects, metal catalysts, intentional doping, and the growth of Si1-xGex nanowires and axial heterostructures. The second half is devoted to a review of III-V nanowire growth with an emphasis on GaAs and InAs nanowires. The growth of vertical and planar III-V nanowires is initially discussed, followed by doping and the synthesis of nanowire axial and radial (core-shell) heterostructures.

Original languageEnglish (US)
Title of host publicationHandbook of Crystal Growth
Subtitle of host publicationThin Films and Epitaxy: Second Edition
PublisherElsevier Inc.
Pages399-439
Number of pages41
Volume3
ISBN (Electronic)9780444633057
ISBN (Print)9780444633040
DOIs
StatePublished - Dec 17 2014

Fingerprint

nanowires
vapors
liquids
energy conversion
synthesis
vapor deposition
catalysts
fabrication
electronics
metals

Keywords

  • Core-shell nanowires
  • Doping of nanowires
  • III-V Nanowires
  • Nanowire axial heterostructures
  • Nanowire growth direction
  • Si nanowires
  • SiGe nanowires
  • Vapor-liquid-solid growth

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Redwing, J. M., Miao, X., & Li, X. (2014). Vapor-Liquid-Solid Growth of Semiconductor Nanowires. In Handbook of Crystal Growth: Thin Films and Epitaxy: Second Edition (Vol. 3, pp. 399-439). Elsevier Inc.. https://doi.org/10.1016/B978-0-444-63304-0.00009-3

Vapor-Liquid-Solid Growth of Semiconductor Nanowires. / Redwing, Joan M.; Miao, Xin; Li, Xiuling.

Handbook of Crystal Growth: Thin Films and Epitaxy: Second Edition. Vol. 3 Elsevier Inc., 2014. p. 399-439.

Research output: Chapter in Book/Report/Conference proceedingChapter

Redwing, JM, Miao, X & Li, X 2014, Vapor-Liquid-Solid Growth of Semiconductor Nanowires. in Handbook of Crystal Growth: Thin Films and Epitaxy: Second Edition. vol. 3, Elsevier Inc., pp. 399-439. https://doi.org/10.1016/B978-0-444-63304-0.00009-3
Redwing JM, Miao X, Li X. Vapor-Liquid-Solid Growth of Semiconductor Nanowires. In Handbook of Crystal Growth: Thin Films and Epitaxy: Second Edition. Vol. 3. Elsevier Inc. 2014. p. 399-439 https://doi.org/10.1016/B978-0-444-63304-0.00009-3
Redwing, Joan M. ; Miao, Xin ; Li, Xiuling. / Vapor-Liquid-Solid Growth of Semiconductor Nanowires. Handbook of Crystal Growth: Thin Films and Epitaxy: Second Edition. Vol. 3 Elsevier Inc., 2014. pp. 399-439
@inbook{53125314ff3b4d6d8815cad362f0f7b6,
title = "Vapor-Liquid-Solid Growth of Semiconductor Nanowires",
abstract = "The vapor-liquid-solid (VLS) growth technique has advanced significantly over the past several decades. This technique has progressed from an interesting method for whisker growth to a viable approach for semiconductor nanowire fabrication for applications in nanoscale electronics, optoelectronics, sensing, and energy conversion. This chapter reviews fundamental aspects of VLS growth with an emphasis on synthesis within a chemical vapor deposition environment. The first half of the chapter is focused on Si nanowire growth, and reviews diameter-dependent growth rate and orientation effects, metal catalysts, intentional doping, and the growth of Si1-xGex nanowires and axial heterostructures. The second half is devoted to a review of III-V nanowire growth with an emphasis on GaAs and InAs nanowires. The growth of vertical and planar III-V nanowires is initially discussed, followed by doping and the synthesis of nanowire axial and radial (core-shell) heterostructures.",
keywords = "Core-shell nanowires, Doping of nanowires, III-V Nanowires, Nanowire axial heterostructures, Nanowire growth direction, Si nanowires, SiGe nanowires, Vapor-liquid-solid growth",
author = "Redwing, {Joan M.} and Xin Miao and Xiuling Li",
year = "2014",
month = "12",
day = "17",
doi = "10.1016/B978-0-444-63304-0.00009-3",
language = "English (US)",
isbn = "9780444633040",
volume = "3",
pages = "399--439",
booktitle = "Handbook of Crystal Growth",
publisher = "Elsevier Inc.",

}

TY - CHAP

T1 - Vapor-Liquid-Solid Growth of Semiconductor Nanowires

AU - Redwing, Joan M.

AU - Miao, Xin

AU - Li, Xiuling

PY - 2014/12/17

Y1 - 2014/12/17

N2 - The vapor-liquid-solid (VLS) growth technique has advanced significantly over the past several decades. This technique has progressed from an interesting method for whisker growth to a viable approach for semiconductor nanowire fabrication for applications in nanoscale electronics, optoelectronics, sensing, and energy conversion. This chapter reviews fundamental aspects of VLS growth with an emphasis on synthesis within a chemical vapor deposition environment. The first half of the chapter is focused on Si nanowire growth, and reviews diameter-dependent growth rate and orientation effects, metal catalysts, intentional doping, and the growth of Si1-xGex nanowires and axial heterostructures. The second half is devoted to a review of III-V nanowire growth with an emphasis on GaAs and InAs nanowires. The growth of vertical and planar III-V nanowires is initially discussed, followed by doping and the synthesis of nanowire axial and radial (core-shell) heterostructures.

AB - The vapor-liquid-solid (VLS) growth technique has advanced significantly over the past several decades. This technique has progressed from an interesting method for whisker growth to a viable approach for semiconductor nanowire fabrication for applications in nanoscale electronics, optoelectronics, sensing, and energy conversion. This chapter reviews fundamental aspects of VLS growth with an emphasis on synthesis within a chemical vapor deposition environment. The first half of the chapter is focused on Si nanowire growth, and reviews diameter-dependent growth rate and orientation effects, metal catalysts, intentional doping, and the growth of Si1-xGex nanowires and axial heterostructures. The second half is devoted to a review of III-V nanowire growth with an emphasis on GaAs and InAs nanowires. The growth of vertical and planar III-V nanowires is initially discussed, followed by doping and the synthesis of nanowire axial and radial (core-shell) heterostructures.

KW - Core-shell nanowires

KW - Doping of nanowires

KW - III-V Nanowires

KW - Nanowire axial heterostructures

KW - Nanowire growth direction

KW - Si nanowires

KW - SiGe nanowires

KW - Vapor-liquid-solid growth

UR - http://www.scopus.com/inward/record.url?scp=84943555849&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84943555849&partnerID=8YFLogxK

U2 - 10.1016/B978-0-444-63304-0.00009-3

DO - 10.1016/B978-0-444-63304-0.00009-3

M3 - Chapter

AN - SCOPUS:84943555849

SN - 9780444633040

VL - 3

SP - 399

EP - 439

BT - Handbook of Crystal Growth

PB - Elsevier Inc.

ER -