Vacancy charging on Si(100)-(2X1): Consequences for surface diffusion and STM imaging

Ho Yeung, H. Chan, Kapil Dev, E. G. Seebauer

Research output: Contribution to journalArticlepeer-review

Abstract

The present work investigates the structure and energetics of charged vacancies on Si(100)-(2x1) by calculations using density functional theory. The calculations predict multiple stable charge states for all vacancy structures investigated, although the neutral state is most stable for typical Si(100) surfaces. The multiplicity of possible states lends significant support to a hypothesized mechanism for nonthermal illumination influences on surface diffusion. The calculations also show that the + 1 state of the upper dimer monovacancy is destabilized by structural relaxations, leading to negative-U properties. Implications of this work for possible artifacts in imaging by scanning tunneling microscopy are discussed.

Original languageEnglish (US)
Article number035311
Pages (from-to)353111-353117
Number of pages7
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume67
Issue number3
StatePublished - Jan 15 2003

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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